fds6675a.pdf

Mosfet FDS6675a P-channel czym zast±pić

Witam serdecznie. Mam problem z laptopem toshiba satellite a60en, otóż spalił się w nim tranzystor MOSFET so-8 o oznaczeniu FDS6675a i nie bardzo wiem czym go zast±pić. Jestem pocz±tkuj±cym elektronikiem i mam pytanie do fachowców na jakie parametry mam zwracać uwagę dobieraj±c zamiennik mosfet-a. My¶lałem nad IRF7416 ma podobne parametry. Z góry dziękuję za odpowiedĽ.


FDS6675A
30V P-Channel PowerTrench? MOSFET
General Description

Features

This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor's advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V - 25V).

o -11 A, -30 V

Applications

o Fast switching speed

o Power management

o High performance trench technology for extremely
low RDS(ON)

RDS(ON) = 13 mOhm @ VGS = -10 V
RDS(ON) = 19 mOhm @ VGS = -4.5 V

o Low gate charge

o Load switch
o Battery protection

o High power and current handling capability

DD
D
D

5
6

G
S G
S
S
S S
S

SO-8
Pin 1 SO-8

Absolute Maximum Ratings
Symbol

3
2

8

D
D

4

7

D
D

1

TA=25oC unless otherwise noted

Ratings

Units

VDSS

Drain-Source Voltage

Parameter

-30

V

VGSS

Gate-Source Voltage

?25

V

ID

Drain Current

-11

A

- Continuous

(Note 1a)

- Pulsed

-50

Power Dissipation for Single Operation

2.5
1.2

(Note 1c)

TJ, TSTG

(Note 1a)
(Note 1b)

PD

1

Operating and Storage Junction Temperature Range

-55 to +175

W

°C

Thermal Characteristics
R?JA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

50

°C/W

R?JA

Thermal Resistance, Junction-to-Ambient

(Note 1c)

125

°C/W

R?JC

Thermal Resistance, Junction-to-Case

(Note 1)

25

°C/W

Package Marking and Ordering Information
Device Marking

Device

Reel Size

Tape width

Quantity

FDS6675A

FDS6675A

13''

12mm

2500 units

?2003 Fairchild Semiconductor Corporation

FDS6675A Rev C (W)

FDS6675A

February 2003

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min

Typ

Max Units

Off Characteristics
BVDSS
?BVDSS
?TJ
IDSS
IGSS

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage

On Characteristics

VGS = 0 V, ID = -250 uA

-30

ID = -250 uA, Referenced to 25°C

V
-23

mV/°C
-10
?100

VDS = -24 V, VGS = 0 V
VGS = ?25 V,
VDS = 0 V

uA
nA

-3

V

(Note 2)

VGS(th)
?VGS(th)
?TJ
RDS(on)

Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance

ID(on)
gFS

On-State Drain Current
Forward Transconductance

VDS = VGS, ID = -250 uA
ID = -250 uA, Referenced to 25°C
VGS = -10 V,
ID = -11 A
ID = -9 A
VGS = -4.5 V,
VGS= -10 V, ID = -11 A, TJ=125°C
VGS = -10 V,
VDS = -5 V
VDS = -5 V,
ID = -11 A

-1

-1.6
5
10
15
14

mV/°C
13
19
18

-50

mOhm

34

A
S

2330
610
300
4

pF
pF
pF
mOhm

Dynamic Characteristics
Ciss
Coss
Crss
Rg

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd

VDS = -15 V,
f = 1.0 MHz

V GS = 0 V,

VGS=15 mV

f= 1.0 MHz

(Note 2)

Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

VDD = -15 V,
VGS = -10 V,

ID = -1 A,
RGEN = 6 Ohm

VDS = -15 V,
VGS = -5 V

ID = -11 A,

14
12
70
37
24
6
9

25
22
110
60
34

ns
ns
ns
ns
nC
nC
nC

-2.1
-1.2

A
V
ns
nC

Drain-Source Diode Characteristics and Maximum Ratings
IS
VSD
trr
Qrr

Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.1 A
Diode Reverse Recovery Time
IF = -11A
diF/dt = 100A/us
Diode Reverse Recovery Charge

(Note 2)

-0.7
33
15

Notes:
1. R?JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R?JC is guaranteed by design while R?CA is determined by the user's board design.

a) 50°C/W when
mounted on a 1in2
pad of 2 oz copper

b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper

c) 125°C/W when mounted on a
minimum pad.

Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width & lt; 300us, Duty Cycle & lt; 2.0%

FDS6675A Rev C (W)

FDS6675A

Electrical Characteristics

FDS6675A

Typical Characteristics

50

2.4

-4.5V -4.0V

40

RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

-ID, DRAIN CURRENT (A)

VGS = -10V
-6.0V

-3.5V

30
-3.0V
20

10

0

2.2

VGS = - 3.5V
2
1.8

-4.0V
1.6

-4.5V
1.4

-6.0V

1.2
1

-10V

0.8

0

0.5

1

1.5

2

2.5

0

10

20

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics.

50

0.05

ID = -11A
VGS = - 10V

1.6

ID = -5.5A
RDS(ON), ON-RESISTANCE (OHM)

RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

40

Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.

1.8

1.4
1.2
1
0.8
0.6

0.04

0.03

TA = 125oC
0.02

TA = 25oC
0.01

0

-50

-25

0

25

50

75

100

125

150

175

2

4

TJ, JUNCTION TEMPERATURE (oC)

6

8

10

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with
Temperature.

Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100

50

TA = -55oC

25oC

-IS, REVERSE DRAIN CURRENT (A)

VDS = -10V
-ID, DRAIN CURRENT (A)

30

-ID, DRAIN CURRENT (A)

40

125oC
30

20

10

0

VGS = 0V
10
TA = 125oC
1
25oC

0.1

-55oC

0.01
0.001
0.0001

1

1.5

2

2.5

3

3.5

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

4

0

0.2

0.4

0.6

0.8

1

1.2

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.

FDS6675A Rev C (W)

FDS6675A

Typical Characteristics

3500

VDS = -10V

ID = -11A

f = 1 MHz
VGS = 0 V

3000

-15V
4
CAPACITANCE (pF)

-VGS, GATE-SOURCE VOLTAGE (V)

5

-20V
3

2

Ciss
2500
2000
1500

Coss
1000

1
500

Crss
0
0

5

10

15

20

25

0

30

0

5

Qg, GATE CHARGE (nC)

Figure 7. Gate Charge Characteristics.

15

20

25

30

Figure 8. Capacitance Characteristics.

100

50
P(pk), PEAK TRANSIENT POWER (W)

RDS(ON) LIMIT
100u
1ms

10

10ms
100ms
1s
10s
DC

1

VGS = -10V
SINGLE PULSE
R?JA = 125oC/W

0.1

TA = 25oC
0.01
0.1

1

10

100

SINGLE PULSE
R?JA = 125°C/W
TA = 25°C

40

30

20

10

0
0.001

0.01

0.1

1

10

100

1000

t1, TIME (sec)

-VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 9. Maximum Safe Operating Area.

r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE

-ID, DRAIN CURRENT (A)

10

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 10. Single Pulse Maximum
Power Dissipation.

1
D = 0.5

R?JA(t) = r(t) * R?JA
0.2

0.1

R?JA = 125oC/W

0.1
0.05

P(pk)

0.02
0.01

t1
t2

0.01

TJ - TA = P * R?JA(t)
Duty Cycle, D = t1 / t2

SINGLE PULSE

0.001
0.0001

0.001

0.01

0.1

1

10

100

1000

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.

FDS6675A Rev C (W)

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™
FACT™
ActiveArray™
FACT Quiet Series™
Bottomless™
FASTâ
CoolFET™
FASTr™
CROSSVOLT™ FRFET™
DOME™
GlobalOptoisolator™
EcoSPARK™
GTO™
E2CMOSTM
HiSeC™
EnSignaTM
I2C™
Across the board. Around the world.™
The Power Franchise™
Programmable Active Droop™

ImpliedDisconnect™ PACMAN™
POP™
ISOPLANAR™
Power247™
LittleFET™
PowerTrenchâ
MicroFET™
QFET™
MicroPak™
QS™
MICROWIRE™
QT Optoelectronics™
MSX™
Quiet Series™
MSXPro™
RapidConfigure™
OCX™
RapidConnect™
OCXPro™
SILENT SWITCHERâ
OPTOLOGICâ
SMART START™
OPTOPLANAR™

SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
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UHC™
UltraFETâ
VCX™

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or
In Design

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I2

This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.


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