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STGF7NB60SL
N-CHANNEL 7A - 600V - TO-220FP
PowerMESH(TM) IGBT
Figure 1: Package

Table 1: General Features
TYPE
STGF7NB60SL
s
s
s
s
s

VCES

VCE(sat) (Max)
@25°C

IC
@100°C

600 V

& lt; 1.6 V

7A

POLYSILICON GATE VOLTAGE DRIVEN
LOW THRESHOLD VOLTAGE
LOW ON-VOLTAGE DROP
LOW GATE CHARGE
HIGH CURRENT CAPABILITY

DESCRIPTION
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the PowerMESH(TM) IGBTs, with outstanding performances.
The suffix "S" identifies a family optimized achieve
minimum on-voltage drop for low frequency applications ( & lt; 1kHz).

3
1

2

Figure 2: Internal Schematic Diagram

APPLICATIONS
LIGHT DIMMER
s STATIC RELAYS
s

Table 2: Order Codes
SALES TYPE

MARKING

PACKAGE

PACKAGING

STGF7NB60SL

GF7NB60SL

TO-220FP

TUBE

Rev.3
September 2004

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STGF7NB60SL
Table 3: Absolute Maximum ratings
Symbol

Parameter

Value

Symbol

VCES

Collector-Emitter Voltage (VGS = 0)

600

V

VECR

Reverse Battery Protection

20

V

VGE

Gate-Emitter Voltage

? 20

V

IC

Collector Current (continuous) at 25°C

15

A

IC

Collector Current (continuous) at 100°C

7

A

Collector Current (pulsed)

20

A

ICM (1)

Total Dissipation at TC = 25°C

25

W

Derating Factor

PTOT

0.2

W/°C

2500

V

- 55 to 150

°C

5

°C/W

62.5

°C/W

VISO

Insulation Withstand Voltage A.C.

Tstg

Storage Temperature

Tj

Operating Junction Temperature

(1)Pulse width limited by max. junction temperature.

Table 4: Thermal Data
Rthj-case

Thermal Resistance Junction-case Max

Rthj-amb

Thermal Resistance Junction-ambient Max

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: Off
Symbol

Parameter

VBR(CES)

Collectro-Emitter Breakdown
Voltage

IC = 250 uA, VGE = 0

600

V

VBR(ECS)

Emitter-Collector Breakdown
Voltage

IC = 1mA, VGE = 0

20

V

Collector-Emitter Leakage
Current (VCE = 0)

VGE = Max Rating
Tc=25°C
Tc=125°C

10
100

uA
uA

Gate-Emitter Leakage
Current (VCE = 0)

VGE = ? 20 V , VCE = 0

?100

nA

Max.

Unit

2.4

V

1.6

V
V

ICES

IGES

Test Conditions

Min.

Typ.

Max.

Unit

Table 6: On
Symbol
VGE(th)
VCE(SAT)

2/9

Parameter

Test Conditions

Gate Threshold Voltage

VCE= VGE, IC= 250 uA

Collector-Emitter Saturation
Voltage

VGE=4.5 V, IC= 7A, Tj= 25°C
VGE=4.5 V, IC= 7A, Tj= 125°C

Min.

Typ.

1.2
1.2
1.1

STGF7NB60SL
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Symbol

Parameter

Test Conditions

Forward Transconductance

Cies
Coes
Cres

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

Qg
Qge
Qgc
ICL

Min.

VCE = 15 V, IC= 7 A

gfs

tscw

Typ.

Max.

Unit

5

S

VCE = 25V, f = 1 MHz, VGE = 0

800
60
10

pF
pF
pF

Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge

VCE = 480V, IC = 7 A,
VGE = 5V
(see Figure 20)

16
2.5
8.5

Turn-Off SOA Minimum
Current

Vclamp = 480 V , Tj = 125°C
RG = 1 KOhm, VGE=5V

Short Circuit Withstand Time

Vce = 0.5 VBR(CES), VGE=5V,
Tj = 125°C , RG = 1KOhm

22

20

nC
nC
nC
A

14

us

Table 8: Switching On
Symbol
td(on)
tr
(di/dt)on
Eon

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Turn-on Delay Time
Current Rise Time

VCC = 480 V, IC = 7 A RG=1KOhm ,
VGE = 5 V
(see Figure 18)

1.1
0.25

us
us

Turn-on Current Slope
Turn-on Switching Losses

VCC= 480 V, IC = 7 A RG=1KOhm
VGE = 5 V,Tj = 125°C

45
2.7

A/us
mJ

Table 9: Switching Off
Symbol
tc
tr(Voff)
td(off)
tf
Eoff(**)
tc
tr(Voff)
td(off)
tf
Eoff(**)

Parameter
Cross-over Time
Off Voltage Rise Time

Test Conditions
Vcc = 480 V, IC = 7 A,
RGE = 1KOhm , VGE = 5 V
(see Figure 18)

Min.

Typ.

Max.

Unit

2.7

us

1.6

us

Delay Time

5.2

us

Current Fall Time

1.1

us

Turn-off Switching Loss

4.1

mJ

4.4

us

2.4

us

Cross-over Time
Off Voltage Rise Time
Delay Time

Vcc = 480 V, IC = 7 A,
RGE = 1KOhm , VGE = 5 V
Tj = 125 °C
(see Figure 18)

6.4

us

Fall Time

1.7

us

Turn-off Switching Loss

7.1

mJ

(**)Turn-off losses include also the tail of the collector current.

3/9

STGF7NB60SL
Figure 3: Output Characteristics

Figure 6: Transfer Characteristics

Figure 4: Transconductance

Figure 7: Collector-Emitter On Voltage vs Temperature

Figure 5: Collector-Emitter On Voltage vs Collector Current

Figure 8: Normalized Collector-Emitter On
Voltage vs Temperature

4/9

STGF7NB60SL
Figure 9: Gate Thereshold vs Temperature

Figure 12: Normalized Breakdown Voltage vs
Temperature

Figure 10: Capacitance Variations

Figure 13: Gate Charge vs Gate-Emitter Voltage

Figure 11: Total Switching Losses vs Gate Resistance

Figure 14: Total Switching Losses vs Temperature

5/9

STGF7NB60SL
Figure 15: Total Switching Losses vs Collector
Current

Figure 16: Thermal Impedance

6/9

Figure 17: Turn-Off SOA

STGF7NB60SL
Figure 18: Test Circuit for Inductive Load
Switching

Figure 20: Gate Charge Test Circuit

Figure 19: Switching Waveforms

7/9

STGF7NB60SL
Table 10: Revision History
Date
04-June-2004
02-Sep-2004

8/9

Revision
2
3

Description of Changes
Stylesheet update. No content change
Datasheet updated, see table1

STGF7NB60SL

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
(C) 2004 STMicroelectronics - All Rights Reserved
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