f9223l_505.pdf

Re: Samsung LE23R81B. - Nie załącza się zasilacz 24V

Co do rozwiązania sprawy to po obcesowym potraktowaniu dyskusji przez kolegę mirex, przenieśliśmy sprawę tymczasowo na PW No faktycznie! Domaganie się prawidłowego opisu elementów (bo skoro coś uszkodzone, to nie przez przypadek pewnie i należy wiedzieć dokładnie co to było!), wskazywanie na błędne analizy i ich konsekwencje, nawet popełnione przez przypadek lub nieuwagę, to obces! :) Myślicie, że tu można dowolne brednie pisać i nikt nie załapie. ;) Główny problem, to brak dostępu do danych technicznych kontrolera F9222L. Pewno. Teraz na brak "papierów" będą zganiać. :) A proszę, niewielkie różnice, do analizy powinno wystarczyć:


?e
?d

?r new
? fo

?mend
?m

t

No

eco
r

.

n
sig

?e
?d

?r new
? fo

?mend
?m

t

No

eco
r

.

n
sig

1.Application
This specifies M-Power:F9223L-F219 applied to multi-oscillated current resonant type
power supply.

2.Block diagram
23 D2

Q2
?
D
G
?
S
?

(20)G2

?VCCP
?VCC
?VREF
?COMP
?CS
?CB
?CON
?STB
?VW

VREF(10)
COMP(11)
CS(12)
CB(13)
CON(14)
STB(15)
VW(16)
IC

?
D
G
OUT? ?

(19)D1,S2

S?

ISNS?
GNDP?
GND?

(4)S1
(8)GND

3.Pin disignation and function
Pin
No.
4
(5)
7
8
(9)
10
11
12
13
14
15
16
19
(1)(2)(18)
20
23
(22)

?e
?d

Symbol
Function
S1
MOSFET(Q1) source
MOSFET(Q1) source current detection
VCC Power supply
GND Ground
MOSFET(Q1) source current detection ground
VREF Reference voltage output
COMP Input feedback signal for constant voltage control
CS
Soft-start and soft-end oscillation
CB
Burst oscillation
CON Reference oscillation of Q1 on-term
STB Standby operarion signal input
Alarm output for latched-shutdown
VW
Q1 turn-on and off timing detection
D1,S2 Q1 drain and Q2 source

?r new
? fo

.

n
sig

?mend
?m

t

No

G2
D2

eco
r

Q2 gate
Q2 drain

Note:
* Pins 3,17,and21 is cut.
* Pins 1,2,5,9,18,and22 no pin frames.
* Pin 6 is disconnected.
This pin is connectd to the Q1 gate but never connect it for waveform observation
or any other purpose. Connection of the pin 6 could lead to major problems and could
destroy the M-Power.
DWG.NO.

Th i s m a t e r i a l a n d t h e i n f o rm a t i o n he re i n i s t h e pr op e r t y o f Fu j i E l e c t ri c
De vi ce Tec hnology Co., Ltd. The y sha ll be ne ither re produce d, copie d,l ent,
o r di s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d
f or t he m a n uf a c t u r i n g pu rp os e s w i t h ou t t h e e x pr e s s w ri t t e n c on se nt o f
F u j i E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d .

VCC(7)

Q1

MS5F06456

3/24
H04-004-03a

No

?mend
?m

t

DWG.NO.

Th i s m a t e r i a l a n d t h e i n f o rm a t i o n he re i n i s t h e pr op e r t y o f Fu j i E l e c t ri c
De vi ce Tec hnology Co., Ltd. The y sha ll be ne ither re produce d, copie d,l ent,
o r di s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d
f or t he m a n uf a c t u r i n g pu rp os e s w i t h ou t t h e e x pr e s s w ri t t e n c on se nt o f
F u j i E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d .

4.Control IC Block diagram

?e
?d

?r new
? fo
n
sig
.

eco
r

MS5F06456

4/24

H04-004-03a

No

?mend
?m

t

DWG.NO.

Th i s m a t e r i a l a n d t h e i n f o rm a t i o n he re i n i s t h e pr op e r t y o f Fu j i E l e c t ri c
De vi ce Tec hnology Co., Ltd. The y sha ll be ne ither re produce d, copie d,l ent,
o r di s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d
f or t he m a n uf a c t u r i n g pu rp os e s w i t h ou t t h e e x pr e s s w ri t t e n c on se nt o f
F u j i E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d .

5.Out view

Trade mark
Type name

Lot. No

?e
?d

?r new
? fo
n
sig
.

eco
r

MS5F06456

5/24

H04-004-03a

6.Absolute maximum ratings : Vcc=19V , Tc=Tj(IC)=Tch(Q1,Q2)=25?
C
Section

Symbol

Drain-source voltage
Continuous drain current

VDS
ID
IDpulse
Gate-source voltage
VGS
Maximum power dissipation PD
Control IC
Voltage
VCC1
VCC2
Zener current
IZ
Max.power dissipation
PDIC
Output current at VREF
IREF
Voltage at CON
VCON
Voltage at CB
VCB
Voltage at CS
VCS
Voltage at COMP
VCOMP
Voltage at STB
VSTB
Voltage at VW
VW
Voltage at S1
VS
Operating Frequency
F
Temperature Operating temperature
Tc
Junction temperature
Tch
Tj
Storage temperature
Tstg

Ratings
MIN MAX
-1.5 +500
-5.3 +5.3
-21.2 +21.2
-30
+30
35
-0.3
+28
Self Limiting
0
+10
1.0
20
-0.3 VREF
-0.3 VREF
-0.3 VREF
-0.3 VREF
-0.3 VREF
-1.3
VCC
-1.0 VREF
15
150
-20 +125
-20 +150
-20 +150
-40 +150

Units
V
A
A
V
W
V
V
mA
W
mA
V
V
V
V
V
V
V
kHz
?
?
?
?

Remarks
Q1 and Q2
Q1:
19-4 terminal
Q2:
23-19 terminal
7-8terminal

?e
?d

10-8 terminal
14-8 terminal
13-8 terminal
12-8 terminal
11-8 terminal
15-8 terminal
16-8 terminal
4-8 terminal
16-8 terminal

.

n
sig

Note :
* The operating frequency in the absolute maximum rating is the operating frequency at normal
operation.about the absolute maximum rating of operating frequency at standby operation, refer
to the " Allowable frequency at standby operation curve " in 12/24 page.

?r new
? fo

* VCC and VREF in maximum ratings mean that it is necessary to make the applied voltage lower
than the voltage of VCC and a VREF terminal. For example , if the voltage will be applied to the
terminal at no VREF voltage , it will be expected to latched shutdown.

?mend
?m

t

No

eco
r

DWG.NO.

Th i s m a t e r i a l a n d t h e i n f o rm a t i o n he re i n i s t h e pr op e r t y o f Fu j i E l e c t ri c
De vi ce Tec hnology Co., Ltd. The y sha ll be ne ither re produce d, copie d,l ent,
o r di s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d
f or t he m a n uf a c t u r i n g pu rp os e s w i t h ou t t h e e x pr e s s w ri t t e n c on se nt o f
F u j i E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d .

MOS-FET

Item

MS5F06456

6/24
H04-004-03a

7.Electrical characteristics : Vcc=19V , Tc=Tj(IC)=Tch(Q1,Q2)=25?
C
Section

Item

Symbol

Test condition
MIN

Drain-source breakdown
voltage
Gate Threshold Voltage
Zero gate voltage drain
current
Drain-source on-state
resistance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

B VDSS
V GS(th)

I D = 5 ? , G S =0V
2 0 AV
I D = 5 ? , DS =V GS
2 0 AV

500
3.5

I DSS

V DS =500V,V G S =0V

RDS(ON)
Ciss
Coss

I D =2.5A,V G S =10V
V DS =25V
V G S =0V

Crss
td(on)
Turn-On Time
tr
td(off)
Turn-Off Time
tf
Diode Forward On-Voltage V SD
Reverse Recovery Time
trr
Reverse Recovery Charge Qrr
Control
Start threshold voltage
V CC(O N)
IC
Stop threshold voltage
V CCL(OFF)
power
Hysteresis
V CCH
Cancellation voltage of
supply
burst operation
V CCB
Hysteresis
V CCBH
Over voltage threshold
voltage
V CCH(OFF)
Latch-stop cancellation
voltage
V CC(LA)
Operating current
I CC
Zener voltage
VZ
Reference voltage
V REF
CON oscillation Discharge current
I ON(DIS)
Charge current
I ON(CHG)
Amplitude of CON voltage V ONLH
Maximum voltage
V ON(MAX)
CB oscillation Discharge current
I B(DIS)
Charge current
I B(CHG)
Amplitude of CB voltage
V BLH
CS oscillation Discharge current
I S(DIS)
Charge current
I S(CHG)
Start threshold voltage of
Q1 switching
V B2H
Stop threshold voltage of
Q1 switching
V B2L
Feedback
(COMP)
Stop voltage
V COMP
Source current
I COMP
Standby(STB) Standby threshold voltage V STBON
voltage
V STBOFF
Internal resistance at
latched-shutdown
R STB
Timing
Q1 turn-on threshold
detection(VW ) voltage
VWH
voltage
VWL
Over current operating
Over current
voltage
V OC
Operating time to Latchedprotection
shutdown
td LA
Reset time
td LAR
Short-circuit current
limiting voltage
V SC
Overheating
protection
Operating temperature
TjOH
Switching
Rise time
tr
characteristics Fall time
tf
Thermal
Channel to case
Rth (ch-c)
resistance
Channel to ambient
Rth (ch-a)

Remarks

4.5

V
V

-

-

25

?
A

Q2:

-

0.40
1200
170

0.50
-

?
pF
pF

23-19 terminal

=V CC(ON)-V CCL(OFF)

15.5
7.9
6.8

9
17.0
10.0
55.0
28.0
1.0
360
2.1
16.5
8.9
7.6

1.5
17.5
9.9
8.4

pF
ns
ns
ns
ns
V
ns
?
C
V
V
V

=V CCB -V CCL(O FF)

9.1
0.73

10.0
1.30

10.9
1.87

V
V

24.0

26.0

28.0

V

0.9
7.5
28.0
4.7
6.5
420
2.7
3.5
8.4
40
0.70
79
83

2.6
9.0
30.0
5.0
9.1
575
3.2
3.9
11.2
52
0.85
105
109

4.1
10.5
34.0
5.3
11.7
730
3.7
4.3
14.0
64
1.00
131
139

V
mA
V
V
mA
?
A
V
V
mA
?
A
V
?
A
?
A

0.63

0.71

0.79

V

0.54

0.63

0.72

V

0.61
0.65
0.85
2.75

0.71
0.95
1.10
3.10

0.81
1.25
1.35
3.45

V
mA
V
V

100

220

340

?

0.65
0.45

0.78
0.58

0.91
0.71

V
V

16-8 terminal

0.83

0.90

0.97

V

4-8 terminal

0.07
70

0.10
100

0.13
130

s
?
s

1.2

1.5

1.8

f=1MHz
Vd=400V
V G S =10V
I D =2.5A
R GS = 0
1?
I F =10A,V GS =0V
I F =I DR ,V GS =0V
-dI F /t1 0 /s
d= 0 A ?

F=75kHz
I CC =10mA

?e
?d

?r new
? fo

?mend
?m
eco

tr

No

Units

-
4.0

125
Only Q1 or Q2 heating
Q1 and Q2 heating

-

-

Q1:
19-4 terminal

7-8 terminal

.

n
sig

10-8 terminal
14-8 terminal

13-8 terminal

12-8 terminal

11-8 terminal
15-8 terminal

V

?
150
0.15
?
s only Q1
0.35
?
s 19-8 terminal
3.5 ? /W Q1 and Q2
84 ? /W

Note:
Capacitor of 2000pF or more should be connected between CON and GND terminals.
DWG.NO.

Th i s m a t e r i a l a n d t h e i n f o rm a t i o n he re i n i s t h e pr op e r t y o f Fu j i E l e c t ri c
De vi ce Tec hnology Co., Ltd. The y sha ll be ne ither re produce d, copie d,l ent,
o r di s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d
f or t he m a n uf a c t u r i n g pu rp os e s w i t h ou t t h e e x pr e s s w ri t t e n c on se nt o f
F u j i E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d .

MOS-FET

Rating
TYP MAX

MS5F06456

7/24
H04-004-03a

8.Characteristics Diagram : Vcc=19V,Tc=Tj(IC)=Tch(Q1,Q2)=25?
C,F=75kHz
[MOS-FET]
Allowable Power Dissipation

Safe operating area
Tc=25 ? D=0.01

50

100

10

30

ID [A ]

PD[W ]

40

t1 s
=?
1?
0
10
0?
1m s

1

20
t

0.1

D=

10

t
T

T

0.01

0
0

25

50

75

100

125

1

150

10

100

VDS[V]

Tch[?]

Transfer Characteristics

Output Characteristics
100

35

V GS=20V

30

10V

10

7V

25
20

ID[A]

ID [A ]

VDS=25V

6.5V

15

1

?e
?d

0.1

6V

5

.

n
sig

?r new
? fo

10

?mend
?m
5.5V
5V

0
0

5

VDS[V] co
e
tr
Transconductance
No
10

15

20

25

0.01

30

0

1

2

3

4

5

6

7

8

9

10

VGS[V]

Drain-Source on-state Resistance
VGS

100

5 =5V
4.5

VDS=25V

5.5V

6V

6.5V

RDS o ) ]
(n[
?

4

10

gfs [S]
1

3.5
3
2.5
2
1.5

7V

1

10V

0.5

20V

0

0.1
0.1

1

10

0

100

5

10

15

20

25

30

35

ID[A]

ID[A]
DWG.NO.

Th i s m a t e r i a l a n d t h e i n f o rm a t i o n he re i n i s t h e pr op e r t y o f Fu j i E l e c t ri c
De vi ce Tec hnology Co., Ltd. The y sha ll be ne ither re produce d, copie d,l ent,
o r di s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d
f or t he m a n uf a c t u r i n g pu rp os e s w i t h ou t t h e e x pr e s s w ri t t e n c on se nt o f
F u j i E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d .

1000

MS5F06456

8/24
H04-004-03a

1

Zth( ch- c)[k/W]

VG S[ V ]
15

10

C[pF]

RDS o ) ]
(n[
?
1

0.8
max.

0.6

-25

0

0

0

10

100
VGS=0V

25
50

0
20
30

Forward Characteristics of
Reverse Diode

N
ot

VGS(th)[V]

1.6

1.4
ID=2.5A
VGS=10V

1.2

0.4
typ.

75

0.5

100

5

Qg[nC]

?me
?m
40

50

1

125

25

20

60

10

?r new
? fo

nd

eco
r

0.1

0.01

DWG.NO.

IF[A]

Th i s m a t e r i a l a n d t h e i n f o rm a t i o n he re i n i s t h e pr op e r t y o f Fu j i E l e c t ri c
De vi ce Tec hnology Co., Ltd. The y sha ll be ne ither re produce d, copie d,l ent,
o r di s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d
f or t he m a n uf a c t u r i n g pu rp os e s w i t h ou t t h e e x pr e s s w ri t t e n c on se nt o f
F u j i E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d .

Drain-Source on-state Resistance
Gate Threshold Voltage vs Tch

6

5.5

0.2
2.5

0
150

70

10

1.5

VSD[V]

I= 5 ?
D 20A
VDS=VGS

5

4.5
max.

4

3.5
3
min.

2
-25

100

0.1

0
25

Tch[? ]

Gate Charge Characteristics

1

50
75

?e
?d

100

ID=5A

Vdd=250V

10

1E-06 1E-05 1E-04 0.001 0.01

MS5F06456

125

1000

n
sig
.

100

0.1

1

150

Tch[?]

Capacitance

10000
VGS=0V
f=1MHz
Ciss

Coss

Crss

1

1000

VDS[V]

Transient Thermal Impedance

10
D=0

1

0.1

0.01

0.001

10

t[sec]

9/24

H04-004-03a

Ic c [m A]
5

0

Vcc[V]

15

0

0
5

5

15

10

5
10

0
10

Vcc-Icc : standby operation

N

10
15

15

ot

15
20

10

start

Vcc[V]

?me
?m
20

20

I [A
c ?]
c

Ic c [m A]

stop
start

Ic c [uA]

15

0
25

Latched at VccH(OFF)
Zener
clump

5
stop

25
20

25

?r new
? fo

nd

stop

start

0

DWG.NO.

Icc[uA]

Ic c [m A]

Th i s m a t e r i a l a n d t h e i n f o rm a t i o n he re i n i s t h e pr op e r t y o f Fu j i E l e c t ri c
De vi ce Tec hnology Co., Ltd. The y sha ll be ne ither re produce d, copie d,l ent,
o r di s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d
f or t he m a n uf a c t u r i n g pu rp os e s w i t h ou t t h e e x pr e s s w ri t t e n c on se nt o f
F u j i E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d .

[IC]
Vcc-Icc : normal operation
Vcc-Icc : normal operation

10
8

10

6

30

40

30

30

Vcc[V]

stop

4
start

2

0
0

Vcc[V]

Vcc-Icc : normal operation
latched shutdown
Vcc-Icc : normal operation
latched shutdown

100

eco
r

6

0

5

0
5

5

10

60

?e
?d

15

10

10

MS5F06456

20

80

Latch operation current

n
sig
.
start

0

15
20

Vcc[V]

Vcc-Icc : standby operation

10

8

VccB

stop

4

start

5

2

0

15

20

Vcc[V]

10/24

H04-004-03a

Vcc-Icc : standby operation
latched shutdown

15

100
Zener
clump

80

I [A
c ?]
c

10

Ic c [m A]

Vcc-Icc : standby operation
latched shutdown

Latched at VccH(OFF)

60
start

40

5

Latch operation current

20

stop

start

0

0
0

5

10

15

20

25

30

0

5

10

20

Vcc[V]

Burst duty-Icc

F-Icc
15

20

10

normal operation

Ic c [m A]

Ic c [m A]

15

10

?r new
? fo

standby operation

0
0

50

?
?m
100

F[kHz]

eco
Tc=Tj=TCH-Icc
r
ot
N

12

150 d
en
m

.

?e
?d

5

5

n
sig

0

0

20

40

60

80

100

duty[%]

Tj=Tc=Tch-Vcc
30
VccH(OFF)

10
normal operation
at F=75kHz

20

Vcc(ON)

Vc c [V]

8
6
4

VccB

10

standby operationat
at F=75kHz,burst duty =20%

VccL(OFF)

2
0
-25

25

75

125

0
-25

Vcc(LA)

0

25

50

75

100

125

Tj=Tc=Tch[?]

Tc=Tj=TCH[?]

DWG.NO.

Ic c [m A]

Th i s m a t e r i a l a n d t h e i n f o rm a t i o n he re i n i s t h e pr op e r t y o f Fu j i E l e c t ri c
De vi ce Tec hnology Co., Ltd. The y sha ll be ne ither re produce d, copie d,l ent,
o r di s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d
f or t he m a n uf a c t u r i n g pu rp os e s w i t h ou t t h e e x pr e s s w ri t t e n c on se nt o f
F u j i E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d .

Vcc[V]

15

MS5F06456

11/24
H04-004-03a

5.05

5.00

4.95

VREF[V]

0

50

30

20

0
2000

t N? ]
O [s

VREF[V]
PD[W ]
0.6

F [kHz ]

0.8

0.4

0.2

0.0
25
50

10
15

N

3000
75

CON-tON

ot

4000
100

4.80

4.75
20

Vcc[V]

5000
125

?me
?m

eco
r

40

10

6000

DWG.NO.

t N? ]
O [s

Th i s m a t e r i a l a n d t h e i n f o rm a t i o n he re i n i s t h e pr op e r t y o f Fu j i E l e c t ri c
De vi ce Tec hnology Co., Ltd. The y sha ll be ne ither re produce d, copie d,l ent,
o r di s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d
f or t he m a n uf a c t u r i n g pu rp os e s w i t h ou t t h e e x pr e s s w ri t t e n c on se nt o f
F u j i E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d .

Allowable Power Dissipation
Allowable frequency
at standby operation

1.2
350

1.0
300

250

200

150

100
50

150
0
0

5.25
5.25

5.20
5.20

5.15
5.15

5.10

4.95

4.90
4.90

4.85
4.85

4.80

4.75

?r new
? fo

nd
25

-25

7000

-25

CON[pF]
20

0

0

40

25

25

60

?e
?d

50

50

80

Tj[?]
Burst duty [%]

Vcc-VREF

75

75

MS5F06456
100

100

100

Tc=Tj=TCH-VREF

5.10

5.05

5.00

n
sig
.
125

Tc=Tj=TCH[?]

Tc=Tj=TCH-tON

22
at CON=3300pF

21

20

19

18

17

16

125

Tc=Tj=TCH[?]

12/24

H04-004-03a

0.6

0.4

VCO MP[V]

dV/dt[V/m s ]
10.0

1.0

1.0

0.8

0.0

dV/dt[V/ms]

FB[Hz ]

FB[Hz ]
1000

1
0
1

0.1
0.001

1.0
10

0.010

C [F
S? ]

VCOMP-ICOMP

t
No

?mend
?m
0.100

2.0

eco
r

3.0

4.0

DWG.NO.

ICO MP[m A]

Th i s m a t e r i a l a n d t h e i n f o rm a t i o n he re i n i s t h e pr op e r t y o f Fu j i E l e c t ri c
De vi ce Tec hnology Co., Ltd. The y sha ll be ne ither re produce d, copie d,l ent,
o r di s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d
f or t he m a n uf a c t u r i n g pu rp os e s w i t h ou t t h e e x pr e s s w ri t t e n c on se nt o f
F u j i E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d .

CB-FB
Tc=Tj=TCH-FB

450

100
-25

100.0

1

1.000

0

?r new
? fo

-25

0.2

0.2

0.0

5.0

-25

VCOMP[V]
0

CS-dV/dt

0

0

25

C [F
B? ]

25

25

50

2

?e
?d
n
sig

50

50

75

MS5F06456

a C = .5 F
t B 01 ?

100
400

10

350
75
100

75

125

Tc=Tj=TCH[?]
a C = .4 ?
t S 00 7 F

Tc=Tj=TCH-dV/dt

4

3

+dV/dt

.

-dV/dt

Tc=Tj=TCH[?]

Tc=Tj=TCH-VCOMP

1.0

0.8

0.6

0.4

0.0
100
125

100

125

Tc=Tj=TCH[?]

13/24

H04-004-03a

2.0

1.5

RSTB[?]

0.0

-25

-25
1.0

3.0

1.0

0.0
0

0.9

0
25

Tc=Tj=TCH[?]

Tc=Tj=TCH-VW

ot

N

25

?me
?m
50

VWH

0.7

0.6

VWL

50

VO C & lt; VSC[V]

VSTB[V]

VCO N[V]

VCO N[V]

2.0

1.0

0.0
2.0
3.0

3.5

VSTBOFF

VSTBON

0.5

75

75
100

?r new
? fo

100

nd

0.8

0.5

0.4

DWG.NO.

VW [V]

Th i s m a t e r i a l a n d t h e i n f o rm a t i o n he re i n i s t h e pr op e r t y o f Fu j i E l e c t ri c
De vi ce Tec hnology Co., Ltd. The y sha ll be ne ither re produce d, copie d,l ent,
o r di s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d
f or t he m a n uf a c t u r i n g pu rp os e s w i t h ou t t h e e x pr e s s w ri t t e n c on se nt o f
F u j i E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d .

VCS-VCON
VCOMP-VCON

4.0
4.0

3.0
3.0

2.0

1.0

4.0
0.0
0.0

200

100

125

-25

eco
r

125

-25

Tc=Tj=TCH[?]
1.0

Tc=Tj=TCH-VSTB

0

0

2.0

VCS[V]

?e
?d

25

25
50

1.5

50

3.0

75

75

MS5F06456

4.0

VCMP[V]

Tc=Tj=TCH-RSTB

500

2.5
400

300

n
sig
.

0

100

100

125

Tc=Tj=TCH[?]

Tc=Tj=TCH-VOC,VSC

2.0

VSC

1.0

0.5

VOC

0.0

125

Tc=Tj=TCH[?]

14/24

H04-004-03a

tdLA[s ]
0.10

t ,1? ]
r t [s
1f

0.12

0.11

0.09

0.08
-25
0
25

No
50

?mend
?m

t
75
100

DWG.NO.

Th i s m a t e r i a l a n d t h e i n f o rm a t i o n he re i n i s t h e pr op e r t y o f Fu j i E l e c t ri c
De vi ce Tec hnology Co., Ltd. The y sha ll be ne ither re produce d, copie d,l ent,
o r di s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d
f or t he m a n uf a c t u r i n g pu rp os e s w i t h ou t t h e e x pr e s s w ri t t e n c on se nt o f
F u j i E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d .

Tc=Tj=TCH-tdLA
Tc=Tj=TCH-tr1,tf1(Q1)

0.5

0.4

0.3

0.2

125
tf1

0.1
tr1

0.0
-25
0

Tc=Tj=TCH[?]

?r new
? fo

25

?e
?d

50
75

MS5F06456

100
125

Tc=Tj=TCH[?]

n
sig
.

eco
r

15/24

H04-004-03a

9. Description
Test circuit
Fig.1
Fig.2
Fig.3
Fig.4
Fig.5
Fig.6
Fig.7
Fig.7
Fig.8
Fig.8

V CC(LA)

Fig.8

Vcc voltage to cancel latching shutdown operation.

ICC
VZ
V REF

Vcc=19V,Vcc terminal current at 75kHz operation.

ION(DIS)
ION(CHG)
V ONLH
V ON(MAX)
IB(DIS)
IB(CHG)
V BLH
IS(DIS)
IS(CHG)
V B2H
V B2L
V COMP
ICOMP
V STBON
V STBOFF
R STB
VW H
VW L
V OC

Fig.8
Fig.7
Fig.7
Fig.8
Fig.8
Fig.8
Fig.8
Fig.8
Fig.8
Fig.8
Fig.8
Fig.8
Fig.8
Fig.8
Fig.8
Fig.8
Fig.9
Fig.9
Fig.10
Fig.11
Fig.11
Fig.12

tdLA

Fig.12

In continuously abnormal state, time until latching shutdown.

tdLAR

Fig.12

In uncontinuously abnormal state, time to cancel latching shutdown timer.

V SC

Fig.12

S1 terminal voltage of short circuit current with latched shutdown.(1 time)

tr
tf

Fig.8
Fig.8
-

tON
C ON
FB
CB
dV/dt
CS
Tc
Tj
T CH
F

description
VCC=VGS =0V,I D= 5 ?
20A
ID= 5 ? ,GS =VDS
2 0 AV
VCC=VGS =0V,V DS=500V
VCC=VGS =19V,I D=2.5A
VGS=10V,I D=2.5A
IF=10A,VCC=VGS=0V
Vcc voltage to output VREF after Vcc's going up from 0V.
Vcc voltage to stop outputting VREF after Vcc's going down from V CC(ON).
=VCC(ON)- V CCL(OFF)
Vcc voltage to cancel standby operation after Vcc's going down at standby operation(STB=L).
=VCCB - V CCL(OFF)
Vcc voltage to latching shutdown after Vcc's going up from V CC(ON).

Vcc voltage at Icc=10mA.
Reference output voltage.
Sink current at CON terminal.
Source current at CON terminal.
The amplitude voltage at CON terminal.
Threshold voltage at H level of V ONLH .
Sink current at CB terminal.
Source current at CB terminal.
The amplitude voltage at CB terminal.
Sink current at CS terminal.
Source current at CS terminal.
Start threshold voltage of Q1 switching.

?e
?d

?r new
? fo

Stop threshold voltage of Q1 switching.
Stop threshold voltage of Q1 switching.

.

n
sig

Source current at COMP terminal.

?mend
?m

Standby threshold voltage after V STB 's going down from V STBOFF.
Standby cancellation voltage after V STB 's going up from VSTBON.
Internal resistance at latched-shutdown.

eco
r

Q1 turn-on threshold voltage after Vw's going up.
Q1 turn-off threshold voltage after Vw's going down.

t
No

S1 terminal voltage of over current with latched shuddown.(0.1 second timer)

Rise time of MOS-FET(Q1).
Fall time of MOS-FET(Q1).
Maximum ON width of MOS-FET(Q1).
The capacitance which is connected between CON and GND.
Burst frequency at standby operation.
The capacitance which is connected between CB and GND.
dV/dt of CS terminal voltage.
The capacitance which is connected between CS and GND.
Case temperature.(back side of pakage)
Junction temperature of control IC.
Channel temperature of MOS-FET(Q1 and Q2).
Switching frequency of Q1.

DWG.NO.

Th i s m a t e r i a l a n d t h e i n f o rm a t i o n he re i n i s t h e pr op e r t y o f Fu j i E l e c t ri c
De vi ce Tec hnology Co., Ltd. The y sha ll be ne ither re produce d, copie d,l ent,
o r di s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d
f or t he m a n uf a c t u r i n g pu rp os e s w i t h ou t t h e e x pr e s s w ri t t e n c on se nt o f
F u j i E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d .

Item
V DSS
V GS(th)(Q2)
IDSS
R DS(ON)(Q1)
R DS(ON)(Q2)
V SD
V CC(ON)
V CCL(OFF)
V CCH
V CCB
V CCBH
V CCH(OFF)

MS5F06456

16/24
H04-004-03a

[Q1]

[Q2]
23
D2?

23
D2 ?

(7) VCC
(10) VREF
(11) COMP
(12) CS
(13) CB
(14) CON
(15) STB
(16) VW

G2 (20)

1mA

V?
??

D 1,S2(19)

(7)VCC
(10)VREF
(11)COMP
(12)CS
(13)CB
(14)CON
(15)STB
(16)VW

1mA

D1,S2 (19)
S1 (4)

[Q2]

?
?

V
?

GND (8)

G2(20)
D1,S2(19)

1mA
V
??
?

S1(4)
GND(8)

?2.VGS(th)
Fig.2 VGS(th)

?1.VDSS
Fig.1 VDSS

[Q1]
[Q1]

(7) VCC
(10) VREF
(11) COMP
(12) CS
(13) CB
(14) CON
(15) STB
(16) VW

[Q2]

G2(20)
D1,S2(19)

(7)VCC
(10)VREF
(11)COMP
(12)CS
(13)CB
(14)CON
(15)STB
(16)VW

D1,S2(19)
A
?

GND(8)

G2(20)

n.

?esig
?d

?mend
?m
eco
r

ID

G(20)
D1,S(19)

V
?

S(4)
GND(8)

?
?

V?
??

S1(4)

GND(8)

[Q1]
23
D?

ID

D1,S2(19)

?4.RDS(ON):Q1
Fig.4 RDS(ON):Q1

?3.IDSS
Fig.3 IDSS

t

23
D2?

?r new
? fo

S1(4)

No
(7)VCC
(10)VREF
(11)COMP
(12)CS
(13)CB
(14)CON
(15)STB
(16)VW

A
?

23
D2?

23
D2?

(7) VCC
(10) VREF
(11) COMP
(12) CS
(13) CB
(14) CON
(15) STB
(16) VW

?5.RDS(ON):Q2
Fig.5 RDS(ON):Q2

[Q2]
23
D2?

23
D2?

D1,S2(19)

G2(20)
D1,S2(19)
S1(4)

V
?

IF
V?
??

IF
?
?

GND(8)

? 6 . VS D
Fig.6 VSD
DWG.NO.

Th i s m a t e r i a l a n d t h e i n f o rm a t i o n he re i n i s t h e pr op e r t y o f Fu j i E l e c t ri c
De vi ce Tec hnology Co., Ltd. The y sha ll be ne ither re produce d, copie d,l ent,
o r di s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d
f or t he m a n uf a c t u r i n g pu rp os e s w i t h ou t t h e e x pr e s s w ri t t e n c on se nt o f
F u j i E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d .

23
D2?

MS5F06456

17/24
H04-004-03a

REF
VREF

(7) VCC
(10) VREF
(11) COMP
(12) CS
(13) CB
(14) CON
(15) STB
(16) VW

23
D2?

A

(7) VCC
(10) VREF
(11) COMP
(12) CS
(13) CB
(14) CON
(15) STB
(16) VW

G2(20)
D1,S2(19)
S1(4)
GND(8)

?7.VCC(ON),?
Fig.7 VCC(ON),etc...

(7)VCC
(10)VREF
(11)COMP
(12)CS
(13)CB
(14)CON
(15)STB
(16)VW

G(20)
D1,S(19)
S(4)
VDS
GND(8)

? 8 . VC C B ,?
Fig.8 VCCB,etc...
23
D?

G(20)
D1,S(19)
S(4)
GND(8)

2. 7mA

VDS

23
D?

(7) VCC
(10) VREF
(11) COMP
(12) CS
(13) CB
(14) CON
(15) STB
(16) VW

G(20)
D1,S(19)
S(4)
GND(8)

?V
?

?9.VSTB
Fig.9 VSTB

.

?e
?d

?r new
? fo

n
sig

? 1 0 . RS T B
Fig.10 RSTB

23
D?

?mend
?m

A

(7) VCC
(10) VREF
(11) COMP
(12) CS
(13) CB
(14) CON
(15) STB
(16) VW

D1,S(19)

eco

r
ot

N

G(20)

S(4)

VDS
GND(8)

(7) VCC
(10) VREF
(11) COMP
(12) CS
(13) CB
(14) CON
(15) STB
(16) VW

? 1 1 . VW
Fig.11 VW

23
D?

G(20)
D1,S(19)
S(4)
VDS
GND(8)

V
?12.VOC,?
Fig.12 VOC,etc...
DWG.NO.

Th i s m a t e r i a l a n d t h e i n f o rm a t i o n he re i n i s t h e pr op e r t y o f Fu j i E l e c t ri c
De vi ce Tec hnology Co., Ltd. The y sha ll be ne ither re produce d, copie d,l ent,
o r di s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d
f or t he m a n uf a c t u r i n g pu rp os e s w i t h ou t t h e e x pr e s s w ri t t e n c on se nt o f
F u j i E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d .

A

23
D?

MS5F06456

18/24
H04-004-03a

10. Reliability test items
All guaranteed values are under the categories of reliability per non-assembled.

Mechanical test methods

Testing methods and Conditions

1 Terminal
Strength
(Tensile)
2 Terminal
Strength
(Bending)
3 Mounting
Strength

Pull force : 10N
Force maintaining duration :10?1sec

Reference
Sampling Acceptance
Standard
number number
EIAJ ED4701
A-111A
method 1
5

Load force : 5N
Number of times :2times(90deg./time)

A-111A
method 3

5

Pressure-bonding force : 80N

A-112
method 3

5

4 Vibration

frequency : 100Hz to 2kHz
2
Acceleration : 200m/s
Sweeping time : 4min./1 cycle
4cycles for each X,Y & Z directions.
2
Peak amplitude: 15km/s
Duration time : 0.5ms
3times for each X,Y & Z directions.

5 Shock

6 Solderability

5 Unsaturated
Pressurized
Vapor
6 Temperature
Cycle

15

?r n
? fo

Temperature : 150+5/-5°C
Test duration : 1000hr
Temperature : -40+5/-5°C
Test duration : 1000hr
Temperature : 85?2°C
Relative humidity : 85?5%
Test duration : 1000hr
Temperature : 85?2°C
Relative humidity : 85?5%
Bias Voltage : VDS(max) * 0.8,VCC=24V,
VCOMP=0V
Test duration : 1000hr
Temperature : 130?2°C
Relative humidity : 85?5%
Vapor pressure : 230kPa
Test duration : 96hr

?mend
?m
eco
r

.
gn15
si

?e
?d
A-132

Number of times : 1time

t
No

15

A-131A
test code A

Solder temp. : 245? ?
5C
Immersion time : 5?
0.5sec

15

A-122A
test code D

5C
7 Resistance to Solder temp. : 260? ?
1sec
Soldering Heat Immersion time : 10?
1 High Temp.
Storage
2 Low Temp.
Storage
3 Temperature
Humidity
Storage
4 Temperature
Humidity
BIAS

(0:1)

A-121A

Each terminal shall be immersed in
the solder bath within 1 to 1.5mm from
the body.

ew

B-111A

22

B-112A

22

B-121A
test code C

22

High temp.side : 100+0/-5?
C
Low temp.side : 0+5/-0?
C

22

B-123A
test code C

22

22

B-141A
test code A

Duration time : HT 30min,LT 30min
Number of cycles : 100cycles
7 Thermal Shock Fluid : pure water(running water)

B-122A
test code C

B-131A
test code A

High temp.side : 150? ?
5C
Low temp.side : -40? ?
5C

22

(0:1)

Duration time : HT 5min,LT 5min
Number of cycles : 10cycles

DWG.NO.

Climatic test methods

Th i s m a t e r i a l a n d t h e i n f o rm a t i o n he re i n i s t h e pr op e r t y o f Fu j i E l e c t ri c
De vi ce Tec hnology Co., Ltd. The y sha ll be ne ither re produce d, copie d,l ent,
o r di s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d
f or t he m a n uf a c t u r i n g pu rp os e s w i t h ou t t h e e x pr e s s w ri t t e n c on se nt o f
F u j i E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d .

Test Test
No. Items

MS5F06456

19/24
H04-004-03a

E ndur ance t est
m et hods

Test Test
No. Items

Testing methods and Conditions

Reference
Sampling Acceptance
Standard
number number
EIAJ ED4701

Ta=25??
5C
Tc=90degree
?
Tch?
Tch(max.)
Test duration : 3000 cycle
2 HTRB
Temperature : 150+0/-15°C
(Drain-Source) Bias Voltage : VDS=VDS(max)*0.8,
VCC=VCC(max),VCOMP=0V
Test duration : 1000hr
1 Intermittent
Operating
Life

D-322

22

(0:1)

D-323

22

Failure Criteria
Item
Symbol Lower Limit Upper Limit Unit
Drain-source breakdown voltage
BVDSS
L ×0 . 8
V
Zero gate voltage drain current
IDSS
U×2
A
Drain-source on-state resistance
RDS(ON)
U×1.2
?
Diode forward on-voltage
VSD
U×1.2
V
Start threshold voltage
Vcc(ON)
L ×0 . 9
U×1.1
V
Stop threshold voltage
VccL(OFF)
L ×0 . 9
U×1.1
V
Hysteresis
VccH
L ×0 . 9
U×1.1
V
Cancellation voltage of burst operation VccB
L ×0 . 9
U×1.1
V
Hysteresis
VccBH
L ×0 . 9
U×1.1
V
Over voltage threshold voltage
VccH(OFF)
L ×0 . 9
U×1.1
V
Operating current
ICC
L ×0 . 8
U×1.2
mA
Reference voltage
VREF
L ×0 . 9
U×1.1
V
Charge current
ION(CHG)
L ×0 . 8
U×1.2
mA
Charge current
IB(CHG)
L ×0 . 8
U×1.2
mA
Charge current
IS(CHG)
L ×0 . 8
U×1.2
mA
Over current operating voltage
VOC
L ×0 . 9
U×1.1
V
Stop voltage
Vcomp
L ×0 . 9
U×1.1
V
Standby threshold voltage
VSTBON
L ×0 . 9
U×1.1
V
Q1 turn-on threshold voltage
VWH
L ×0 . 9
U×1.1
V
* LSL : Lower Specification Limit
* USL : Upper Specification Limit

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ot
Nany of electrical characteristics measure, all testing related to the humidity
* Before

hav e conducted af ter drying the package surf ace f or more than an hour at 150°C.

DWG.NO.

Electrical Characteristics

Th i s m a t e r i a l a n d t h e i n f o rm a t i o n he re i n i s t h e pr op e r t y o f Fu j i E l e c t ri c
De vi ce Tec hnology Co., Ltd. The y sha ll be ne ither re produce d, copie d,l ent,
o r di s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d
f or t he m a n uf a c t u r i n g pu rp os e s w i t h ou t t h e e x pr e s s w ri t t e n c on se nt o f
F u j i E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d .

Failure Criteria

MS5F06456

20/24
H04-004-03a

11. Cautions
? Although Fuji Electric is continually improving product quality and reliability, a small percentage of
semiconductor products may become faulty. When using Fuji Electric semiconductor products in your
equipment, you are requested to take adequate safety measures to prevent the equipment from causing
physical injury, fire, or other problem in case any of the products fail. It is recommended to make your
design fail-safe, flame retardant, and free of malfunction.

? The products described in this Specification are not designed or manufactured to be used in equipment or
systems used under life-threatening situations. If you are considering using these products in the equipment
listed below, first check the system construction and required reliability, and take adequate safety measures
such as a backup system to prevent the equipment from malfunctioning.
? Backbone network equipment
? Transportation equipment (automobiles, trains, ships, etc.)
? Traffic-signal control equipment
? Gas alarms, leakage gas auto breakers
? Submarine repeater equipment
? Burglar alarms, fire alarms, emergency equipment
? Medical equipment
? Nuclear control equipment etc.

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? Do not use the products in this Specification for equipment requiring strict reliability such as(but not limited
to):
? Aerospace equipment
? Aeronautical equipment

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12. Warnings

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? The MOSFETs should be used in products within their absolute maximum rating(voltage, current,
temperature, etc.).
? The MOSFETs may be destroyed if used beyond the rating.
? We only guarantee the non-repetitive and repetitive Avalanche capability and not for the continuous
Avalanche capability which can be assumed as abnormal condition .Please note the device may be
destructed from the Avalanche over the specified maximum rating.
? The equipment containing MOSFETs should have adequate fuses or circuit breakers to prevent the
equipment from causing secondary destruction (ex. fire, explosion etc...).
? Use the MOSFETs within their reliability and lifetime under certain environments or conditions. The
MOSFETs may fail before the target lifetime of your products if used under certain reliability conditions.

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? Be careful when handling MOSFETs for ESD damage. (It is an important consideration.)
? Whn adn M S E shlt mb t cs ( caead o'oc t l d ade i l
e hnlg O F T,o h
i
d e yh aep kg)n dn t hh e s n tmn s
e
a
tu e a
r a.
? It is recommended that any handling of MOSFETs is done on grounded electrically conductive floor and
tablemats.

DWG.NO.

Th i s m a t e r i a l a n d t h e i n f o rm a t i o n he re i n i s t h e pr op e r t y o f Fu j i E l e c t ri c
De vi ce Tec hnology Co., Ltd. The y sha ll be ne ither re produce d, copie d,l ent,
o r di s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d
f or t he m a n uf a c t u r i n g pu rp os e s w i t h ou t t h e e x pr e s s w ri t t e n c on se nt o f
F u j i E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d .

? The products described in this Specification are intended for use in the following electronic and electrical
equipment which has normal reliability requirements.
? Computers
? OA equipment
? Communications equipment(Terminal devices)
? Machine tools
? AV equipment
? Measurement equipment
? Personal equipment ? Industrial robots
? Electrical home appliances etc.

MS5F06456

21/24
H04-004-03a

? You must design the MOSFETs to be operated within the specified maximum ratings(voltage, current,
temperature, etc.) to prevent possible failure or destruction of devices.
? Consider the possible temperature rise not only for the channel and case, but also for the outer leads.
? Do not directly touch the leads or package of the MOSFETs while power is supplied or during operation in
order to avoid electric shock and burns.
? The MOSFETs are made of incombustible material. However, if a MOSFET fails, it may emit smoke or
flame. Also, operating the MOSFETs near any flammable place or material may cause the MOSFETs to
emit smoke or flame in case the MOSFETs become even hotter during operation. Design the arrangement
to prevent the spread of fire.
? The MOSFETs should not used in an environment in the presence of acid, organic matter, or corrosive
gas(hydrogen sulfide, sulfurous acid gas etc.)
? The MOSFETs should not used in an irradiated environment since they are not radiation-proof.
? During open short test, the internal of the MOSFETs might explode instantaneously and the resin mold
package might be blown off when high voltage is applied to the low voltage terminals. Make sure in your
design that during open short test, high voltage will not be applied to the low voltage terminals. To avoid
accidents and explosion damage if high voltage is applied, use fuses in your design.

n.
gavoid device
? Soldering involves temperatures which exceed the device storage temperature rating. To
si
eassurance standard.
damage and to ensure reliability, observe the following guidelines from the quality
wd
ne
Soldering methods
for
d
Solder temperature and duration
en
Package type
Methods
mm
odipping Soldering Temp. & Time Note
Solder
c
A re
260?5?, 10?1sec
Through hole t
Soldering iron
o Solder dipping
package N
B
350?10?, 3.5?0.5sec

?
?

Installation

?
?

?
?
Soldering iron

? The immersion depth of the lead should basically be up to the lead stopper and the distance should be a
maximum of 1.5mm from the device.
? When flow-soldering, be careful to avoid immersing the package in the solder bath.
? Refer to the following the pressure-bonding force reference when mounting the device on a heat sink.
Excess pressure-bonding force causes damage to the device and weak pressure-bonding force will
increase the thermal resistance, both of which conditions may destroy the device.
Table 1: Recommended pressure-bonding force
Package style
Recommended pressure-bonding force
SIP23
30 - N
80

DWG.NO.

Th i s m a t e r i a l a n d t h e i n f o rm a t i o n he re i n i s t h e pr op e r t y o f Fu j i E l e c t ri c
De vi ce Tec hnology Co., Ltd. The y sha ll be ne ither re produce d, copie d,l ent,
o r di s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d
f or t he m a n uf a c t u r i n g pu rp os e s w i t h ou t t h e e x pr e s s w ri t t e n c on se nt o f
F u j i E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d .

? Before touching a MOSFET terminal, Discharge any static electricity from your body and clothes by
grounding out through a high impedance resistor (about 1M?
)
? When soldering, in order to protect the MOSFETs from static electricity, ground the soldering iron or
soldering bath through a low impedance resistor.

Note

MS5F06456

22/24
H04-004-03a

? T e eti solhv alns wtn3? adogns wtn 0m A oke t th n g
h has k hu ae ft s ii 0 m n r hes ii1? .l ,eph i t i
n
d
ae
h?
u
h
s
eg e n
torque within the limits of this specification.
? Improper handling may cause isolation breakdown leading to a critical accident.
ex.) Over plane off the edges of screw hole. (Recommended plane off the edge is C & lt; 1.0mm)
? We recommend the use of thermal compound to optimize the efficiency of heat radiation. It is important to
evenly apply the compound and to eliminate any air voids.
? We do not recommend to re-use the device once after solder is removed and detached from the board. The
detached device may not withstand the thermal when solder is removed, or damage by mechanical force.

? The MOSFETs must be stored at a standard temperature of 5 to 35? and relative humidity of 45 to 75%.
? If the storage area is very dry, a humidifier may be required. In such a case, use only deionized water or
boiled water, since the chlorine in tap water may corrode the leads.
? The MOSFETs should not be subjected to rapid changes in temperature to avoid condensation on the
surface of the MOSFETs. Therefore store the MOSFETs in a place where the temperature is steady.
? The MOSFETs should not be stored on top of each other, since this may cause excessive external force on
the case.
? The MOSFETs should be stored with the lead terminals remaining unprocessed. Rust may cause
presoldered connections to fail during later processing.
? The MOSFETs should be stored in antistatic containers or shipping bags.
? Under the above storage condition, use the MOSFETs within one year.
13. Compliance with pertaining to restricted substances
13-1) Compliance with the RoHS Regulations and Exemptions

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This product will be fully compliant with the RoHS directive.
Five out of six substances below which are regulated by the RoHS directive in Europe are not included in
this product. The exception is only lead.

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The RoHS directive has some exemptions. The following relates to this product :
Lead in high melting temperature type solders (Sn-Pb solder alloy which contains more than 85%)

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This product is used to the high melting temperature type solders (Sn-Pb solders) for die-bonding.
Moreover, the terminals used lead-free solder.
* The six substances regulated by the RoHS Directive are:
Lead, Mercury, Hexavalent chromium, Cadmium, PBB (polybrominated biphenyls),
PBDE (polybrominated diphenyl ethers).

13-2) Compliance with the calss-1 ODS and class-2 ODS. (ODS: Ozone-Depleting Substances)
This products does not contain and used t " wcne i t Po co ot O oe ae
h L ocrn h retn f e zn Lyr
ea
ng e t i
h
throughh C nooS ei d us ne ad t r esr ( P N" n the Montreal Protocol.
t otlf pci S bt cs n Oh M au sJ A )ad
e
r
f
e
a
e
eA
,

DWG.NO.

Th i s m a t e r i a l a n d t h e i n f o rm a t i o n he re i n i s t h e pr op e r t y o f Fu j i E l e c t ri c
De vi ce Tec hnology Co., Ltd. The y sha ll be ne ither re produce d, copie d,l ent,
o r di s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d
f or t he m a n uf a c t u r i n g pu rp os e s w i t h ou t t h e e x pr e s s w ri t t e n c on se nt o f
F u j i E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d .

Storage

MS5F06456

23/24
H04-004-03a

Th i s m a t e r i a l a n d t h e i n f o rm a t i o n he re i n i s t h e pr op e r t y o f Fu j i E l e c t ri c
De vi ce Tec hnology Co., Ltd. The y sha ll be ne ither re produce d, copie d,l ent,
o r di s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d
f or t he m a n uf a c t u r i n g pu rp os e s w i t h ou t t h e e x pr e s s w ri t t e n c on se nt o f
F u j i E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d .

? If you have any questions about any part of this Specification, please contact Fuji
Electric or its sales agent before using the product.
? Neither Fuji nor its agents shall be held liable for any injury caused by using the products
not in accordance with the instructions.
? The application examples described in this specification are merely typical uses of Fuji
Electric products.
? This specification does not confer any industrial property rights or other rights, nor
constitute a license for such rights.

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?m

DWG.NO.

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MS5F06456

24/24
H04-004-03a


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