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FJN3305R-889034.pdf

Samsung RL39 WBMS - co to jest lub jego zamiennik TO-92 R3305

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FJN3305R
NPN Epitaxial Silicon Transistor with Bias Resistor
Features

Description

• 100 mA Output Current Capability
• Built-in Bias Resistor (R1 = 4.7 kΩ, R2 = 10 kΩ)

Transistors with built-in resistors can be excellent
space- and cost-saving solutions by reducing component count and simplifying circuit design.

Applications
• Switching, Interface, and Driver Circuits
• Inverters
• Digital Applications in Industrial Segments

Equivalent Circuit

C

R1
B

TO-92
12

3

Straight Lead
Bulk Packing

1

2

R2

1. Emitter
2. Collector
3. Base
3

E

Bent Lead
Tape & Reel
Ammo Packing

Ordering Information
Part Number

Top Mark

Package

Packing Method

FJN3305RTA

R3305

TO-92 3L

Ammo

Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Value

Unit

50

V

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

50

V

VEBO

Emitter-Base Voltage

10

V

IC

Collector Current

100

mA

TJ

Junction Temperature

150

°C

TSTG

Storage Temperature

-55 to +150

°C

© 2002 Fairchild Semiconductor Corporation
FJN3305R Rev. 1.4

www.fairchildsemi.com

FJN3305R — NPN Epitaxial Silicon Transistor with Bias Resistor

October 2015

Values are at TA = 25°C unless otherwise noted.

Symbol
PD

Value

Unit

Power Dissipation

Parameter

300

mW

Derate Above TA = 25°C

2.4

mW/°C

Thermal Resistance, Junction to Ambient
416
RθJA
Note:
1. PCB size: FR-4 76 x 114 x 0.6T mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

°C/W

Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter
Collector-Emitter Breakdown Voltage

IC = 100 μA, IB = 0

hFE

Cob

Typ.

VCB = 40 V, IE = 0

V
0.1

VCE = 5 V, IC = 5 mA
IC = 10 mA, IB = 0.5 mA

Output Capacitance

VCE = 10 V, IC = 5 mA,
f = 1 MHz

μA

0.3

DC Current Gain

V

3.7
250

Current Gain Bandwidth Product

VCE = 5 V, IC = 100 μA

VI(on)

Input-On Voltage

VCE = 0.3 V, IC = 20 mA

30

VCE = 10 V, IC = 5 mA

Input-Off Voltage

Unit
V

Collector-Emitter Saturation Voltage

VI(off)

fT

Max.

50

Collector Cut-Off Current

BVCEO

VCE(sat)

Min.
50

Collector-Base Breakdown Voltage

ICBO

Conditions
IC = 10 μA, IE = 0

BVCBO

pF
MHz
0.3

2.5

V
V

R1

Input Resistor

3.2

4.7

6.2

R1/R2

Resistor Ratio

0.42

0.47

0.52

© 2002 Fairchild Semiconductor Corporation
FJN3305R Rev. 1.4



www.fairchildsemi.com
2

FJN3305R — NPN Epitaxial Silicon Transistor with Bias Resistor

Thermal Characteristics(1)

1000

100

VCE =0.3V
R1 = 4.7K
R2 = 10K

VI (on)[V], INPUT VOLTAGE

hFE, DC CURRENT GAIN

VCE = 5V
R1 = 4.7K
R2 = 10K
100

10

1
0.1

1

10

10

1

0.1
0.1

100

1

IC[mA], COLLECTOR CURRENT

10

100

IC[mA], COLLECTOR CURRENT

Figure 1. DC Current Gain

Figure 2. Input-On Voltage

350

VCE = 5V
R1 = 4.7K
R2 = 10K

300

PC[mW], POWER DISSIPATION

IC [μA], COLLECTOR CURRENT

10k

1k

100

10

1
0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

200

150

100

50

0

2.0

0

VI (off)[V], INPUT OFF VOLTAGE

25

50

75

100

125

150

175

o

Ta[ C], AMBIENT TEMPERATURE

Figure 4. Power Derating

Figure 3. Input-Off Voltage

© 2002 Fairchild Semiconductor Corporation
FJN3305R Rev. 1.4

250

www.fairchildsemi.com
3

FJN3305R — NPN Epitaxial Silicon Transistor with Bias Resistor

Typical Performance Characteristics

FJN3305R — NPN Epitaxial Silicon Transistor with Bias Resistor

Physical Dimensions

Figure 5. 3-LEAD, TO-92, MOLDED 0.200 IN-LINE SPACING LD FORM

© 2002 Fairchild Semiconductor Corporation
FJN3305R Rev. 1.4

www.fairchildsemi.com
4

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Definition of Terms
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Advance Information

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Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
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changes at any time without notice to improve the design.
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The datasheet is for reference information only.
Rev. I77

© Fairchild Semiconductor Corporation

www.fairchildsemi.com

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