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JIEJIE MICROELECTRONICS CO. , Ltd
JST06 Series
6A TRIACs
Rev.2.0
DESCRIPTION:
2
JST06 series triacs, with high ability to withstand the
shock loading of large current, provide high dv/dt rate
with strong resistance to electromagnetic interface.
With high commutation performances, 3 quadrants
products especially recommended for use on inductive
load.
12
3
1
TO-251
12
3 TO-220A
12
3
3
TO-252
TO-220B
T1(1)
MAIN FEATURES
G(3)
Symbol
Value
Unit
IT(RMS)
6
A
VDRM /VRRM
600/800
V
VTM
1.55
V
T2(2)
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Tstg
-40 - 150
℃
Tj
-40 - 125
℃
Repetitive peak off-state voltage (Tj=25℃)
VDRM
600/800
V
Repetitive peak reverse voltage (Tj=25℃)
VRRM
600/800
V
Non repetitive surge peak Off-state voltage
VDSM
VDRM + 100
V
Non repetitive peak reverse voltage
VRSM
VRRM + 100
V
IT(RMS)
6
A
ITSM
60
A
I2t
18
A2s
dI/dt
50
A/μs
IGM
2
A
PG(AV)
1
W
Storage junction temperature range
Operating junction temperature range
RMS on-state current
TO-251/ TO-252
TO-220B(TC=107℃)
TO-220A(TC=100℃)
Non repetitive surge peak on-state current
(full cycle, F=50Hz)
I2t value for fusing (tp=10ms)
Critical rate of rise of on-state current
(IG=2×IGT)
Peak gate current
Average gate power dissipation
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JST06 Series
JieJie Microelectronics CO. , Ltd
Peak gate power
PGM
5
W
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
Value
Symbol
Test Condition
Quadrant
Unit
TW
IGT
VGT
VGD
CW
BW
5
10
35
50
Ⅰ-Ⅱ-Ⅲ
VD =12V RL =30Ω
VD =VDRM Tj =125℃
RL =3.3KΩ
MAX
Ⅰ-Ⅱ-Ⅲ
MAX
1.5
V
Ⅰ-Ⅱ-Ⅲ
MIN
0.2
V
Ⅰ-Ⅲ
mA
10
IH
ITM =0.2A
VD=2/3VDRM Gate Open Tj =125℃
50
70
25
60
80
MAX
IG =1.2IGT
15
15
IL
dV/dt
SW
6
10
35
60
mA
MIN
20
50
400
1000
V/μs
MAX
Ⅱ
mA
STATIC CHARACTERISTICS
Symbol
VTM
IDRM
IRRM
Parameter
ITM =8.5A tp=380μs
VD =VDRM VR =VRRM
Value(MAX)
Unit
Tj=25℃
1.55
V
Tj=25℃
5
μA
Tj=125℃
1
mA
Value
Unit
THERMAL RESISTANCES
Symbol
Parameter
TO-251/ TO-252
junction to case(AC)
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TO-220A
3.9
TO-220B
Rth(j-c)
3.5
2.4
- 2 / 6-
℃/W
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JST06 Series
JieJie Microelectronics CO. , Ltd
ORDERING INFORMATION
J
ST
06
B
-600
TW
TW: IGT1-3≤5mA
SW: IGT1-3≤10mA
CW: IGT1-3≤35mA
BW: IGT1-3≤50mA
JieJie Microelectronics Co.,Ltd
Triacs
IT(RMS):6A
600: VDRM /VRRM≥600V
800: VDRM /VRRM≥800V
H:TO-251 K:TO-252
A:TO-220A B:TO-220B
PACKAGE MECHANICAL DATA
Dimensions
Ref.
m
.
x3
8m
Millimeters
Min.
Typ.
Inches
Max.
Min.
Typ.
Max.
a
C2
D
V1
L3
H
L1
C3
L2
4.60
0.173
0.181
B
A
F
M
4.40
0.61
0.88
0.024
0.035
0.46
0.70
0.018
0.028
C2
1.21
1.32
0.048
0.052
C3
2.40
2.72
0.094
0.107
D
8.60
9.70
0.339
0.382
E
Φ
A
C
E
9.80
10.4
0.386
0.409
F
6.55
6.95
0.258
0.274
2.54
G
H
28.0
29.8
1.102
3.75
L1
B
0.1
1.173
0.148
C
TO-220A
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L2
1.14
1.70
0.045
0.067
L3
G
2.65
2.95
0.104
0.116
V1
- 3 / 6-
45°
45°
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JST06 Series
JieJie Microelectronics CO. , Ltd
PACKAGE MECHANICAL DATA
Dimensions
Ref.
Millimeters
Min.
Typ.
Inches
Max.
Min.
Typ.
Max.
A
D
V1
V1
L2
L1
L
0.047
0.55
0.65
0.022
0.026
5.10
5.40
0.200
0.213
0.76
0.85
0.030
0.033
C
0.45
0.62
0.018
0.024
0.48
0.62
0.019
0.024
6.00
6.20
0.236
0.244
E
H
0.035
D
V1
1.20
C2
B3
0.90
B3
C2
0.095
B2
B2
0.086
A2
A
2.40
B
E
2.20
6.40
6.70
0.252
0.264
2.30
G
0.091
H
G
0.630
0.669
8.90
9.40
0.350
0.370
L1
1.80
1.90
0.071
0.075
L2
A2
17.0
L
C
B
16.0
1.37
1.50
0.054
4°
V1
TO-251
0.059
4°
Dimensions
Ref.
Millimeters
Min.
Typ.
Inches
Max.
Min.
Typ.
Max.
0.6 M
IN
D
V1
L2
L1
H
V1
V1
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0.55
0.65
0.022
0.026
5.10
5.40
0.200
0.213
C
0.45
0.62
0.018
0.024
0.48
0.62
0.019
0.024
6.00
6.20
0.236
0.244
E
6.40
6.70
0.252
0.264
G
4.40
4.70
0.173
0.185
9.35
10.6
0.368
0.417
1.30
1.70
0.051
0.067
L2
V2
0.009
L1
A2
0.095
0.001
H
C
0.086
D
B
2.40
0.23
C2
C2
2.20
0.03
B2
A
B2
G
A
A2
B
E
1.37
1.50
0.054
4°
V1
TO-252
V2
- 4 / 6-
0°
0.059
4°
8°
0°
8°
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JST06 Series
JieJie Microelectronics CO. , Ltd
PACKAGE MECHANICAL DATA
Dimensions
Ref.
.8
x3
mm
Millimeters
Min.
Typ.
Inches
Max.
Min.
Typ.
Max.
F
D
V1
L3
H
L1
0.88
0.024
0.035
0.46
0.70
0.018
0.028
1.21
1.32
0.048
0.052
2.40
2.72
0.094
0.107
8.60
9.70
0.339
0.382
9.60
10.4
0.378
0.409
F
L2
0.61
D
C3
0.181
C3
JIE
0.173
C2
C2
4.60
B
A
4.40
E
Φ
Ma
A
C
E
6.20
6.60
0.244
0.260
2.54
G
H
28.0
G
29.8
1.102
3.75
L1
B
0.1
1.173
0.148
L2
1.14
1.70
0.045
0.067
L3
C
2.65
2.95
0.104
0.116
45°
V1
TO-220B
FIG.1 Maximum power dissipation versus RMS
on-state current
45°
FIG.2: RMS on-state current versus case
temperature
IT(RMS) (A)
8
P(w)
9
α=180°
TO-251/
TO-252/
TO-220B
6
6
TO-220A
4
3
2
0
0
1.5
IT(RMS) (A)
3.0
4.5
6.0
7.5
FIG.3: Surge peak on-state current versus
number of cycles
0
0
Tc (℃)
25
50
75
100
125
FIG.4: On-state characteristics (maximum
values)
ITSM (A)
60
75
ITM (A)
t=20ms
One cycle
Tj=Tjmax
60
10
45
30
1
15
Tj=25℃
0
1
Number of cycles
10
100
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1000
0.1
0
- 5 / 6-
1
2
VTM (V)
3
4
5
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JST06 Series
JieJie Microelectronics CO. , Ltd
FIG.5: Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp & lt; 20ms, and
2
corresponging value of I t (dI/dt & lt; 50A/μs)
FIG.6: Relative variations of gate trigger current,
holding current and latching current versus
junction temperature
IGT,IH,IL(Tj) /IGT,IH,IL(Tj=25℃)
ITSM (A), I2 t (A2 s)
3.0
1000
2.5
2.0
ITSM
dI/dt
100
1.5
IGT
IH & IL
1.0
0.5
I2 t
tp(ms)
10
0.01
0.1
1
10
20
0.0
-40
Tj (℃)
-20
0
20
40
60
80
100
120
140
Information furnished in this document is believed to be accurate and reliable. However,
Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of
use without consideration for such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart from that
when an agreement is signed, Jiangsu JieJie complies with the agreement.
Products and information provided in this document have no infringement of patents. Jiangsu
JieJie assumes no responsibility for any infringement of other rights of third parties which
may result from the use of such products and information.
This document is the second version which is made in 16-Dec.-2014. This document
supersedes and replaces all information previously supplied.
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.
Copyright ©2014 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.
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