STP36NE06.pdf

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STP36NE06
STP36NE06FP

(R)

N - CHANNEL 60V - 0.032Ohm - 36A - TO-220/TO-220FP
STripFET(TM) POWER MOSFET
TYPE

V DSS

R DS(on)

ID

ST P36NE06
ST P36NE06FP

60 V
60 V

& lt; 0.040 Ohm
& lt; 0.040 Ohm

36 A
20 A

s
s
s
s
s

TYPICAL RDS(on) = 0.032 Ohm
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE 100 oC
APPLICATION ORIENTED
CHARACTERIZATION
1

DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique "Single Feature Size(TM) "
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalance characteristics and
less critical alignment steps therefore a remarkable manufacturing reproducibility.

2

3

3
1

TO-220

2

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS

ABSOLUTE MAXIMUM RATINGS
Symbol

Parameter

Value
STP36NE06

V DS

Uni t

STP36NE06FP

Drain-source Voltage (V GS = 0)

60

V

V DGR

Drain- gate Voltage (R GS = 20 kOhm)

60

V

V GS

Gate-source Voltage

? 20
o

V

ID

Drain Current (continuous) at Tc = 25 C

36

20

A

ID

o

24

14

A

144

144

A

IDM (o)
P t ot

Drain Current (continuous) at Tc = 100 C
Drain Current (pulsed)
o

Total Dissipation at Tc = 25 C

100

35

W

Derating F actor

0.66

0.27

W/ C

?

2000

V

V ISO

Insulation Withstand Voltage (DC)

dv/dt

Peak Diode Recovery voltage slope

T stg
Tj

Storage T emperature
Max. O perating Junction Temperature

(o) Pulse width limited by safe operating area

July 1998

7

o

V/ ns

-65 to 175

o

C

175

o

C

( 1) ISD <= 36 A, di/dt <= 300 A/us, VDD <= V(BR)DSS, Tj <= TJMAX

1/9

STP36NE06FP
THERMAL DATA
T O-220
R t hj-ca se
R t hj- amb
R thc- si nk
Tl

Thermal Resistance Junction-case

TO-220F P

1.51

4.28

Max

Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose

o

62.5
0.5
300

C/W

o

C/W
C/W
o
C

o

AVALANCHE CHARACTERISTICS
Symb ol

Parameter

Max Valu e

I AR
E AS

Unit

36

A

180

mJ

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 o C, I D = IAR , VDD = 25V)

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symb ol
V (BR)DSS
I DSS

I GSS

Parameter
Drain-source
Breakdown Voltage

Test Cond ition s
I D = 250 uA

Typ .

Max.

60

V GS = 0

Un it
V

1
10

T c = 125

V GS = ? 20 V

uA
uA

? 100

V DS = Max Rating
Zero G ate Voltage
Drain Current (VGS = 0) V DS = Max Rating
o
C
Gate-body Leakage
Current (V DS = 0)

Min.

nA

ON (*)
Symb ol

Parameter

Test Cond ition s

Gate Threshold
Voltage

R DS( on)

Static Drain-source On V GS = 10V
Resistance

ID(o n)

V DS = VGS

Typ .

Max.

Un it

2

3

4

V

0.032

ID = 250 uA

V GS(th)

Min.

0.04

Ohm

ID = 18 A
36

On State Drain Current V DS &amp; gt; I D(on) x R DS(on) max
V GS = 10 V

A

DYNAMIC
Symb ol
g fs (*)
C iss
C oss
C rss

2/9

Parameter

Test Cond ition s

Forward
Transconductance

V DS &amp; gt; I D(on) x R DS(on) max

Input Capacitance
Output Capacitance
Reverse T ransfer
Capacitance

V DS = 25 V

f = 1 MHz

I D =18 A
VGS = 0

Min.

Typ .

7

15
2115
260
65

Max.

Un it
S

2800
350
90

pF
pF
pF

STP36NE06FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
t d(on)
tr
(di/dt) on
Qg
Q gs
Q gd

Parameter

Test Cond ition s

Turn-on Time
Rise Time

V DD = 30 V
R G =4.7Ohm

Turn-on Current Slope

V DD = 48 V
R G = 4.7 Ohm

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

V DD = 48 V

Min.

Max.

Un it

40
115

ns
ns

250

ID = 36 A
V GS =10 V
I D = 36 A

Typ .
28
85

ID = 18 A
V GS = 10 V

V GS = 10 V

A/us

50
13
18

70

nC
nC
nC

Typ .

Max.

Un it

12
25
40

16
35
55

ns
ns
ns

Typ .

Max.

Un it

36
144

A
A

SWITCHING OFF
Symb ol
t r(Vof f)
tf
tc

Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time

Test Cond ition s

Min.

V DD = 48 V I D = 36 A
R G =4.7 Ohm VGS = 10 V

SOURCE DRAIN DIODE
Symb ol
I SD
I SDM (o)
V SD (*)
t rr
Q rr
I RRM

Parameter

Test Cond ition s

Min.

Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage

I SD = 36 A

Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current

I SD = 36 A
V DD = 30 V

V GS = 0

1.5

V

75

ns

245

uC

6.5

di/dt = 100 A/us
o
Tj = 150 C

A

(*) Pulsed: Pulse duration = 300 us, duty cycle 1.5 %
(o) Pulse width limited by safe operating area

Safe Operating Area for TO-220

Safe Operating Area for TO-220FP

3/9

STP36NE06FP
Thermal Impedance for TO-220

Thermal Impedance forTO-220FP

Output Characteristics

Transfer Characteristics

Transconductance

Static Drain-source On Resistance

4/9

STP36NE06FP
Gate Charge vs Gate-source Voltage

Capacitance Variations

Normalized Gate Threshold Voltage vs
Temperature

Normalized On Resistance vs Temperature

Source-drain Diode Forward Characteristics

5/9

STP36NE06FP
Fig. 1: Unclamped Inductive Load Test Circuit

Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuits For
Resistive Load

Fig. 4: Gate Charge test Circuit

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

6/9

STP36NE06FP

TO-220 MECHANICAL DATA
mm

DIM.
MIN.

inch

TYP.

MAX.

MIN.

TYP.

MAX.

A

4.40

4.60

0.173

0.181

C

1.23

1.32

0.048

0.051

D

2.40

2.72

0.094

D1

0.107

1.27

0.050

E

0.49

0.70

0.019

0.027

F

0.61

0.88

0.024

0.034

F1

1.14

1.70

0.044

0.067

F2

1.14

1.70

0.044

0.067

G

4.95

5.15

0.194

0.203

G1

2.4

2.7

0.094

0.106

H2

10.0

10.40

0.393

0.409

14.0

0.511

0.551

L2

16.4

L4

0.645

13.0
2.65

2.95

0.104

0.116

L6

15.25

15.75

0.600

0.620

L7

6.2

6.6

0.244

0.260

L9

3.5

3.93

0.137

0.154

DIA.

3.75

3.85

0.147

0.151

D1

C

D

A

E

L5

H2

G

G1

F1

L2

F2

F

Dia.

L5

L9
L7
L6

L4

P011C

7/9

STP36NE06FP

TO-220FP MECHANICAL DATA
mm

DIM.
MIN.

inch

TYP.

MAX.

MIN.

TYP.

MAX.

A

4.4

4.6

0.173

0.181

B

2.5

2.7

0.098

0.106

D

2.5

2.75

0.098

0.108

E

0.45

0.7

0.017

0.027

F

0.75

1

0.030

0.039

F1

1.15

1.7

0.045

0.067

F2

1.15

1.7

0.045

0.067

G

4.95

5.2

0.195

0.204

G1

2.4

2.7

0.094

0.106

H

10

10.4

0.393

0.409

L2

16

0.630

28.6

30.6

1.126

1.204

L4

9.8

10.6

0.385

0.417

L6

15.9

16.4

0.626

0.645

L7

9

9.3

0.354

0.366

?

3

3.2

0.118

0.126

B

D

A

E

L3

L3
L6

F

F1

L7

F2

H

G

G1

?

1 2 3
L2

8/9

L4

STP36NE06FP

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compone nts in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
(C) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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.

9/9


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