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Jaki zamiennik dla triaka BTB04 1000CW wybrać?

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BTB04-600SL

®

STANDARD 4A TRIAC

MAIN FEATURES

A2

Symbol

Value

Unit

IT(RMS)

4

A

VDRM / VRRM

600

V

IGT(Q1)

10

mA

G
A1

A2

DESCRIPTION
The BTB04-600SL 4 quadrants TRIAC is intended
for general purpose applications where high surge
current capability is required, such as lighting,
corded power tools, industrial.
This TRIAC features a gate current capability
sensitivity of 10mA.

A1
A2

G
TO-220AB

ABSOLUTE MAXIMUM RATINGS
Symbol
IT(RMS)
ITSM
I2t

Parameter

A

F = 50 Hz

t = 20 ms

35

A

F = 60 Hz

t = 16.7 ms

38

tp = 10ms

6

A2s

50

A/µs

4

A

Non repetitive surge peak on-state current
(full cycle, Tj initial = 25°C)
I2t value for fusing
Critical rate of rise of on-state current
IG = 2 x IGT, tr ≤ 100 ns

IGM

Peak gate

Tstg
Tj

Unit

4

TO-220AB

dI/dt

PG(AV)

Value
Tc = 105°C

RMS on-state current (full sine wave)

Average gate power dissipation
Storage junction temperature range
Operating junction temperature range

March 2002 - Ed: 1A

Repetitive F = 100Hz
tp = 20µs

Tj = 125°C
Tj = 125°C

0.5

W

-40 to +150
-40 to +125

°C

1/5

BTB04-600SL
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
IGT (1)

Test conditions
VD = 12V

Quadrant

Unit
mA

VD = 12V

VGD

VD = VDRM

IH(2)

MAX.

25

MAX.

1.3

V

ALL

MIN.

0.2

V

MAX.

IG = 1.2IGT

10

ALL

RL = 30Ω

MAX.

15

mA

MAX.

15

mA

IT = 100mA

IL

I - II - III
IV

VGT

RL = 30Ω

Value

RL = 3.3kΩ

Tj = 125°C

I - III - IV
II

dV/dt (2)
(dV/dt)c (2)

25

VD = 67% VDRM gate open Tj = 125°C

MIN.

75

V/µs

(dI/dt)c = 1.8A/ms

MIN.

10

V/µs

Tj = 125°C

STATIC CHARACTERISTICS
Symbol
VTM (2)

Test Conditions

Value

Unit

ITM = 5A tp = 380µs

Tj = 25°C

MAX.

1.5

V

Threshold voltage

Tj = 125°C

MAX.

0.85

V

Rd (2)

Dynamic resistance

Tj = 125°C

MAX.

100

mΩ

IDRM
IRRM

VDRM = VRRM

Tj = 25°C
Tj = 125°C

MAX.

5
1

µA
mA

VTO

(2)

Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1.

THERMAL RESISTANCE
Symbol

Parameter

Value

Unit

Rth (j-c)

3

°C/W

Rth (j-a)

2/5

Junction to case (AC)
Junction to ambient

60

°C/W

BTB04-600SL
PRODUCT SELECTOR
Part Number

Voltage

Sensitivity

Type

Package

BTB04-600SL

600V

10 mA

Standard

TO-220AB

ORDERING INFORMATION

BT

B

04

-

600

SL
S: SENSITIVITY = 10mA
L: LIGHTING APPLICATION

TRIAC SERIES
INSULATION
B: non insulated

VOLTAGE: 600V

CURRENT: 4A
Fig. 1: Maximum power dissipation versus RMS
on-state current

Fig. 2: RMS on-state current versus case
temperature.

P(W)

IT(RMS)(A)

5

5.0
α=180°

α=180°

4.5
4.0

4

3.5
3.0

3

2.5
2.0

2

1.5
180°

1

IT(RMS)(A)

1.0

α

α

0.5

Tc(°C)

0.0

0

0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

25

50

75

100

125

4.0

Fig. 3: Relative variation of thermal impedance
versus pulse duration.

Fig. 4: On-state characteristics (maximum values)
ITM(A)

K = [Zth/Rth]

100

1.E+00
Tj=25°C
Zth(j-c)

Tj=125°C

1.E-01
Zth(j-a)

10

1.E-02

1.E-03
1.E-03

Tj max. :
Vto = 0.85 V
Rd = 100 mW

VTM(V)

tp(s)
1

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

0

1

2

3

4

5

6

7

8

9

10

3/5

BTB04-600SL
Fig. 5: Surge peak on-state current versus number
of cycles.

Fig. 6: Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp & lt; 10ms, and
corresponding value of I2t.
ITSM(A), I2t (A2s)

ITSM(A)
40

1000
Tj initial=25°C

35
t=20ms

Non repetitive
Tj initial=25°C

30

100

25

dI/dt limitation:
50A/µs

ITSM

20
Repetitive
Tc=110°C

15

10

I²t

10
5

tp(ms)

Number of cycles
0
1

10

100

1
0.01

1000

Fig. 7: Relative variation of gate trigger current,
holding current and latching current versus junction temperature (typical values).

0.10

1.00

10.00

Fig. 8: Relative variation of critical rate of decrease
of main current versus reapplied dV/dt (typical values).

IGT, IH, IL[Tj] / IGT, IH, IL [Tj = 25°C]

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.0

3.0

1.8
2.5

1.6
1.4

2.0
IGT

1.2
1.0

1.5

0.8
IH & IL

1.0

0.6
0.4

0.5

0.2

Tj(°C)

dV/dt (V/µs)

0.0

0.0
-40 -30 -20 -10

0

0.1

10 20 30 40 50 60 70 80 90 100 110 120 130

Fig. 9: Relative variation of critical rate of decrease
of main current versus junction temperature.

1.0

10.0

100.0

Fig. 10: Relative variation of static dV/dt immunity
versus junction temperature.
dV/dt [Tj] / dV/dt [Tj = 125°C]

(dI/dt)c [Tj] / (dI/dt)c [Tj = 125°C]
8

8

7

7

6

6

5

5

4

4

3

3

2

2

VD=VR=400V

1

1

Tj(°C)

0

Tj(°C)

0
25

4/5

50

75

100

125

25

50

75

100

125

BTB04-600SL
PACKAGE MECHANICAL DATA
TO-220AB (Plastic)
DIMENSIONS
REF.

Millimeters

Inches

Min.

L7
L6

0.173

0.181

1.23

1.32

0.048

0.051

2.40

2.72

0.094

0.107

0.49

0.70

0.019

0.027

F

0.61

0.88

0.024

0.034

F1

L5

4.60

D

C

4.40

E

Dia

Max.

C

A

Min.

A
H2

Max.

1.14

1.70

0.044

0.066

F2
F1

L4

0.044

0.066

5.15

0.194

0.202

2.40

2.70

0.094

0.106

H2

D

L9

1.70

4.95

G1

F2

1.14

G

L2

10

10.40

0.393

0.409

L2

F

16.4 typ.

0.645 typ.

L4

0.511

0.551

L5

2.65

2.95

0.104

0.116

15.25

15.75

0.600

0.620

6.20

6.60

0.244

0.259

L9

G

14

L7

E

13

L6

M

G1

3.50

3.93

0.137

0.154

M
Diam.

2.6 typ.
3.75

3.85

0.102 typ.
0.147

0.151

OTHER INFORMATION
Ordering type

Marking

Package

Weight

Base qty

Packing mode

BTB04-600SL

BTB04-600SL

TO-220AB

2.3 g

50

Tube

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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