Widzę że mam uszkodzony MOSFET 8 pin który jest przy pinach ładowania. Widzę że dość rzadki temat.... Czym go można zastąpić?
TSM150P04LCS
Taiwan Semiconductor
P-Channel Power MOSFET
-40V, -22A, 15mΩ
FEATURES
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
VDS
● Low RDS(ON) to minimize conductive losses
● Logic level
● Low gate charge for fast power switching
-40
V
RDS(on)
VGS = -10V
15
(max)
● 100% UIS and Rg tested
● Compliant to RoHS directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
VGS = -4.5V
21
mΩ
Qg
23
nC
APPLICATIONS
● POL
● Load Switch
● Motor Drives
SOP-8
Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
Continuous Drain Current
TC = 25°C
(Note 1)
-40
V
VGS
Gate-Source Voltage
UNIT
VDS
Drain-Source Voltage
LIMIT
±20
V
ID
TA = 25°C
Pulsed Drain Current
-22
-9
A
IDM
Single Pulse Avalanche Current
(Note 2)
Single Pulse Avalanche Energy
Total Power Dissipation
Total Power Dissipation
TC = 25°C
TC = 125°C
TA = 25°C
TA = 125°C
Operating Junction and Storage Temperature Range
-88
A
IAS
EAS
(Note 2)
-27
109
A
mJ
PD
PD
12.5
2.5
2.2
0.4
W
W
TJ, TSTG
- 55 to +150
°C
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
RӨJC
10
°C/W
Junction to Ambient Thermal Resistance
RӨJA
57
°C/W
THERMAL PERFORMANCE
PARAMETER
Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while RӨCA is
determined by the user’s board design.
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Version: A1611
TSM150P04LCS
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = -250µA
BVDSS
-40
--
--
V
Gate Threshold Voltage
VGS = VDS, ID = -250µA
VGS(TH)
-1
-1.65
-2.5
V
Gate-Source Leakage Current
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
--
--
-1
--
--
-100
--
11
15
--
15
21
gfs
--
29
--
Qg
--
48
--
Qg
--
23
--
Qgs
--
9
--
Qgd
--
8.5
--
Ciss
--
2783
--
Coss
--
269
--
Crss
--
142
--
Rg
2
6
12
td(on)
--
7
--
tr
--
45
--
td(off)
--
67
--
tf
--
59
--
VSD
--
--
-1
V
VGS = 0V, VDS = -40V
Drain-Source Leakage Current
IDSS
VGS = 0V, VDS = -32V
TJ = 125°C
Drain-Source On-State Resistance
VGS = -10V, ID = -9A
(Note 3)
VGS = -4.5V, ID = -8A
Forward Transconductance
Dynamic
(Note 3)
RDS(on)
VDS = -5V, ID = -9A
µA
mΩ
S
(Note 4)
VGS = -10V,
Total Gate Charge
VDS = -20V, ID = 9A
Total Gate Charge
VGS = -4.5V,
Gate-Source Charge
VDS = -20V, ID = -9A
Gate-Drain Charge
Input Capacitance
VGS = 0V, VDS = -20V
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
Gate Resistance
Switching
f = 1.0MHz
nC
pF
Ω
(Note 4)
Turn-On Delay Time
Turn-On Rise Time
VGS = -10V, VDS = -20V,
Turn-Off Delay Time
ID = -9A, RG = 2Ω,
Turn-Off Fall Time
ns
Source-Drain Diode
Forward Voltage
(Note 3)
VGS = 0V, IS = -9A
Reverse Recovery Time
IS = -9A ,
trr
--
19
--
ns
Reverse Recovery Charge
dI/dt = 100A/μs
Qrr
--
11
--
nC
Notes:
1.
2.
3.
4.
Silicon limited current only.
L = 0.3mH, VGS = -10V, VDD = -25V, RG = 25Ω, IAS = -27A, Starting TJ = 25°C
Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%.
Switching time is essentially independent of operating temperature.
ORDERING INFORMATION
PART NO.
TSM150P04LCS RLG
PACKAGE
PACKING
SOP-8
2,500pcs / 13” Reel
2
Version: A1611
TSM150P04LCS
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Output Characteristics
Transfer Characteristics
30
VGS=-10V
VGS=-7V
VGS=-5V
VGS=-4.5V
VGS=-4V
VGS=-3.5V
24
18
-ID, Drain Current (A)
-ID, Drain Current (A)
30
VGS=-3V
12
6
24
18
25℃
12
6
150℃
-55℃
0
0
0
1
2
3
4
0
On-Resistance vs. Drain Current
3
4
Gate-Source Voltage vs. Gate Charge
0.025
0.02
VGS=-4.5V
0.015
0.01
VGS=-10V
0.005
VDS=-20V
ID=-9A
8
6
4
2
0
0
0
6
12
18
24
0
30
10
-ID, Drain Current (A)
VGS=-10V
ID=-9A
1.4
1.2
1
0.8
0.6
-75
-50
-25
0
25
50
75
30
40
50
On-Resistance vs. Gate-Source Voltage
100
125
150
RDS(on), Drain-Source On-Resistance (Ω)
On-Resistance vs. Junction Temperature
1.6
20
Qg, Gate Charge (nC)
1.8
RDS(on), Drain-Source On-Resistance
(Normalized)
2
10
0.03
-VGS, Gate to Source Voltage (V)
RDS(ON), Drain-Source On-Resistance (Ω)
1
-VGS, Gate to Source Voltage (V)
-VDS, Drain to Source Voltage (V)
TJ, Junction Temperature (°C)
0.05
0.04
0.03
0.02
ID=-9A
0.01
0
3
4
5
6
7
8
9
10
-VGS, Gate to Source Voltage (V)
3
Version: A1611
TSM150P04LCS
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
BVDSS vs. Junction Temperature
BVDSS (Normalized)
Drain-Source Breakdown Voltage
Capacitance vs. Drain-Source Voltage
4000
C, Capacitance (pF)
3500
3000
CISS
2500
2000
1500
1000
500
COSS
CRSS
0
0
10
20
30
1.2
ID=-1mA
1.1
1
0.9
0.8
40
-75
-50
0
25
50
75
100 125 150
TJ, Junction Temperature (°C)
-VDS, Drain to Source Voltage (V)
Maximum Safe Operating Area, Junction-to-Case
Source-Drain Diode Forward Current vs. Voltage
100
-IS, Reverse Drain Current (A)
100
RDS(ON)
-ID, Drain Current (A)
-25
10
1
SINGLE PULSE
RӨJC=10°C/W
TC=25°C
10
150℃
25℃
1
-55℃
0.1
0.1
0.1
1
10
0.2
100
0.4
0.6
0.8
1
1.2
-VSD, Body Diode Forward Voltage (V)
-VDS, Drain to Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient
Thermal Impedance, ZӨJC
10
SINGLE PULSE
RӨJC=10°C/W
1
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single
0.1
0.01
0.0001
0.001
0.01
Notes:
Duty = t1 / t2
TJ = TC + PDM x ZӨJC x RӨJC
0.1
1
10
t, Square Wave Pulse Duration (sec)
4
Version: A1611
TSM150P04LCS
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
SOP-8
SUGGESTED PAD LAYOUT (Unit: Millimeters)
MARKING DIAGRAM
150P04L
YML
Y = Year Code
M = Month Code
O =Jan P =Feb
S =May T =Jun
W =Sep X =Oct
L = Lot Code (1~9, A~Z)
Q =Mar
U =Jul
Y =Nov
R =Apr
V =Aug
Z =Dec
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Version: A1611
TSM150P04LCS
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
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Version: A1611