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Connection Diagrams
3
1701
85
3
1
2
MMBD1701
MMBD1703
MMBD1704
MMBD1705
SOT-23
MARKING
85
MMBD1701A
87
MMBD1703A
88
MMBD1704A
89
MMBD1705A
85A
87A
88A
89A
1
3 1703
2NC
1
1704 3
2
1
3
1
1
2
2
3 1705
2
Small Signal Diodes
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
VRRM
Maximum Repetitive Reverse Voltage
30
V
IF(AV)
Average Rectified Forward Current
50
mA
IFSM
Tstg
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Storage Temperature Range
250
-55 to +150
mA
°C
TJ
Operating Junction Temperature
150
°C
Value
Units
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
Symbol
Parameter
PD
Power Dissipation
350
mW
RθJA
Thermal Resistance, Junction to Ambient
357
°C/W
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
IR
Reverse Current
IR = 5.0 µA
IF = 10 µA
IF = 100 µA
IF = 1.0 m A
IF = 10 mA
IF = 20 mA
IF = 50 mA
V R = 20 V
CT
Total Capacitance
V R = 0, f = 1.0 MHz
trr
Reverse Recovery Time
MMBD1701-1705
VR
Breakdown Voltage
VF
Forward Voltage
MMBD1701A-1705A
2001 Fairchild Semiconductor Corporation
IF = IR = 10 mA, IRR = 1.0 m A,
R L = 100 Ω
IF = IR = 10 mA, IRR = 1.0 m A,
R L = 100 Ω
Min
Max
Units
30
420
520
640
760
810
0.89
500
610
740
880
950
1.1
mV
mV
mV
mV
mV
V
nA
V
50
1.0
pF
0.7
ns
1.0
ns
MMBD1700 series, Rev. B1
MMBD1701/A / 1703/A / 1704/A / 1705/A
MMBD1701/A / 1703/A / 1704/A / 1705/A
(continued)
Typical Characteristics
60
10
Reverse Voltage, VR [V]
Reverse Current. I R [nA]
Ta= 25 °C
50
40
2
3
5
10
20
Reverse Current,IR [uA]
30
50
850
Forward Voltage, V F [mV]
550
500
450
400
350
2
3
5
10
20
30
Forward Current, IF [uA]
50
5
10
20
Ta= 25 °C
750
700
650
600
0.1
0.2
0.3
0.5
1
2
Forward Current, IF [mA]
3
5
10
Figure 4. Forward Voltage vs Forward Current
VF - 0.1 to 10 mA
1.6
1.0
Ta= 25 ° C
To tal C apacitance [pF ]
Ta= 25 °C
Forward Voltage, VF [V]
3
Reverse Voltage, V R [V]
800
550
100
Figure 3. Forward Voltage vs Forward Current
VF - 1.0 to 100 uA
1.4
1.2
1.0
0.8
2
Figure 2. Reverse Current vs Reverse Voltage
IR - 1 to 22V
Ta= 25 °
C
1
1
100
600
Forward Voltage, V F [mV]
5
0
1
Figure 1. Reverse Voltage vs Reverse Current
BV - 1.0 to 100 uA
300
Ta= 25 ° C
0.9
0.8
0.7
0.6
0.5
10
20
30
50
100
200
0
2
4
6
8
10
12
14
Forward Current, I F [m A]
R e v e rse V o lta g e [V ]
Figure 5. Forward Voltage vs Forward Current
VF - 10 - 200 mA
Figure 6. Total Capacitance vs Reverse Current
MMBD1700 series, Rev. B1
MMBD1701/A / 1703/A / 1704/A / 1705/A
Small Signal Diode
(continued)
Typical Characteristics
(continued)
150
350
Power Dissipation, P D [mW]
Current [mA]
300
100
IO - A
v e ra
50
ge R
e c tifi
e
d Cu
rr
ent mA
250
SOT-23
200
DO-7
150
100
50
0
0
25
50
75
100
125
150
Am bient Tem perature, T A [ ° C]
Figure 7. Average Rectified Current (IO)
versus Ambient Temperature (TA)
175
0
25
50
75
100
125
150
175
200
Average Temperature, Io
Figure 8. Power Derating Curve
MMBD1700 series, Rev. B1
MMBD1701/A / 1703/A / 1704/A / 1705/A
Small Signal Diode
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
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CoolFET™
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DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST ®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench ®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER ®
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET ®
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
Mouser Electronics
Authorized Distributor
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MMBD1703