2N7002DW.pdf

Płyta msi z270 gaming m7 - Prośba o identyfikację elementów

Prześledziłem cały schemat płyty i znalazłem 3 rodzaje układów 6-nóżkowych, jednak analizując najbardziej pasujący jest element o nazwie NN-HBN2515S6R z dwóch powodów: zgodnie z schematem nóżka 1 jest zwarta z nóżką 4 do masy co zgadzało by się z pomiarami oraz na schemacie znajdują się 3 takie elementy co ma odzwierciedlenie na płycie, gdyż doszukałem się właśnie jedynie 2 + domniemany 3 którego brakuje. Analizując dalej schemat sprawdziłem, że owe NN-HBN2515S6R łączą się z złączami audio, a więc odpowiadają za dźwięk. Więc pytanie czy bez tego płyta wystartuje i jedynie porty audio nie będą działać poprawnie czy może to nieść jakieś konsekwencje ?


2N7002DW
N-Channel Enhancement Mode Field Effect Transistor
Features
o
o
o
o
o
o
o
o

Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant
D2

1
Marking : 2N

G1

S1

1 S2

SC70-6 (SOT363)

G2

D1

Ordering Information
Part Number

Top Mark

Package

Packing Method

2N7002DW

2N

SC70 6L

Tape and Reel

Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

VDSS

V

60

Drain-Gate Voltage (RGS <= 1.0 M?)

Unit

60

Drain-Source Voltage

VDGR

Value

V

TJ, TSTG

Drain Current
Junction and Storage Temperature Range

(C) 2007 Fairchild Semiconductor Corporation
2N7002DW Rev. 1.2

Pulsed

?40
115

Continuous at 100°C

73

Pulsed

ID

Gate-Source Voltage

?20

Continuous

VGSS

Continuous

800

V

mA

-55 to +150

°C

www.fairchildsemi.com

2N7002DW -- N-Channel Enhancement Mode Field Effect Transistor

January 2015

Values are at TA = 25°C unless otherwise noted.

Symbol
PD
R?JA

Parameter

Value

Unit

Total Device Dissipation

200

mW

Derate Above TA = 25°C

1.6

mW/°C

Thermal Resistance, Junction-to-Ambient(1)

625

°C/W

Note:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.

Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Conditions

Min.

Typ.

60

Max.

78

Unit

Off Characteristics(2)
BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 10 ?A
VDS = 60 V, VGS = 0 V

0.001

1.0

IDSS

Zero Gate Voltage Drain Current

VDS = 60 V, VGS = 0 V,
TJ = 125°C

7

500

IGSS

Gate-Body Leakage

VGS = ?20 V, VDS = 0 V

0.2

?10

nA

1.76

2.00

V

1.6

7.5

V
?A

On Characteristics(2)
VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 ?A

1.00

VGS = 5 V, ID = 0.05 A
RDS(ON)

ID(ON)
gFS

Static Drain-Source On-Resistance

VGS = 10 V, ID = 0.5 A

2.0

VGS = 10 V, ID = 0.5 A,
TJ = 125°C

2.53

?

13.5

On-State Drain Current

VGS = 10 V, VDS = 7.5 V

0.50

1.43

A

Forward Transconductance

VDS = 10 V, ID = 0.2 A

80.0

356.5

mS

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VDS = 25 V, VGS= 0 V,
f = 1.0 MHz

37.8

50

pF

12.4

25

pF

6.5

7

pF

5.85

20

ns

12.5

20

ns

Switching Characteristics
tD(ON)

Turn-On Delay Time

tD(OFF)

Turn-Off Delay Time

VDD = 30 V, ID = 0.2 A,
VGEN = 10 V, RL = 150 ?,
RGEN = 25 ?

Note:
2. Short duration test pulse used to minimize self-heating effect.

(C) 2007 Fairchild Semiconductor Corporation
2N7002DW Rev. 1.2

www.fairchildsemi.com
2

2N7002DW -- N-Channel Enhancement Mode Field Effect Transistor

Thermal Characteristics

3.0

RDS(on),
DRANI-SOURCE ON-RESISTANCE

ID. DRAIN-SOURCE CURRENT(A)

1.6

VGS = 10V

1.4
1.2

5V

1.0

4V

0.8
0.6
0.4

3V

0.2

VGS = 3V

4V

4.5V

5V
6V

2.5

2.0

10V
9V

1.5

8V
7V

2V
0.0
0

1

2

3

4

5

6

7

8

9

1.0
0.0

10

0.2

0.4

VDS. DRAIN-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics

RDS(on),
DRANI-SOURCE ON-RESISTANCE

RDS(on)
DRANI-SOURCE ON-RESISTANCE

1.0

3.0

VGS = 10V
ID = 500 mA

2.5

2.0

1.5

1.0

0.5
-50

2.5

ID = 500 mA
2.0

ID = 50 mA
1.5

1.0
0

50

100

150

2

4

o

Vth, Gate-Source Threshold Voltage (V)

1.0
o

TJ = -25 C
o

0.8

150 C
o

25 C
o

125 C
0.6
o

75 C
0.4

0.2

0.0
3

4

5

10

2.5

VGS = VDS

2.0

ID = 1 mA
ID = 0.25 mA
1.5

1.0
-50

6

0

50

100

150
o

VGS. GATE-SOURCE VOLTAGE (V)

TJ. JUNCTION TEMPERATURE( C)

Figure 6. Gate Threshold Variation with Temperature

Figure 5. Transfer Characteristics

(C) 2007 Fairchild Semiconductor Corporation
2N7002DW Rev. 1.2

8

Figure 4. On-Resistance Variation
with Gate-Source Voltage

Figure 3. On-Resistance Variation with Temperature

VDS = 10V

6

VGS. GATE-SOURCE VOLTAGE (V)

TJ. JUNCTION TEMPERATURE( C)

ID. DRAIN-SOURCE CURRENT(A)

0.8

Figure 2. On-Resistance Variation with Gate Voltage
and Drain Current

3.0

2

0.6

ID. DRAIN-SOURCE CURRENT(A)

www.fairchildsemi.com
3

2N7002DW -- N-Channel Enhancement Mode Field Effect Transistor

Typical Performance Characteristics

280

o

150 C

PC[mW], POWER DISSIPATION

IS Reverse Drain Current, [mA]

VGS = 0 V

100

o

25 C
10
o

-55 C

1
0.0

0.2

0.4

0.6

0.8

200

160

120

80

40

0

1.0

0

25

50

75

100

125

150

175

o

Ta[ C], AMBIENT TEMPERATURE

VSD, Body Diode Forward Voltage [V]

Figure 7. Reverse Drain Current Variation with Diode
Forward Voltage and Temperature

(C) 2007 Fairchild Semiconductor Corporation
2N7002DW Rev. 1.2

240

Figure 8. Power Derating

www.fairchildsemi.com
4

2N7002DW -- N-Channel Enhancement Mode Field Effect Transistor

Typical Performance Characteristics (Continued)

2N7002DW -- N-Channel Enhancement Mode Field Effect Transistor

Physical Dimensions

SYMM
C
L
2.00?0.20

0.65

A

0.50 MIN
6

4

B

PIN ONE

1.25?0.10

1

1.90

3
0.30
0.15

(0.25)

0.40 MIN
0.10

0.65

A B

1.30

LAND PATTERN RECOMMENDATION

1.30
1.00
0.80

SEE DETAIL A

1.10
0.80
0.10 C

0.10
0.00

C

2.10?0.30

SEATING
PLANE
NOTES: UNLESS OTHERWISE SPECIFIED
GAGE
PLANE

(R0.10)
0.25
0.10

0.20

A) THIS PACKAGE CONFORMS TO EIAJ
SC-88, 1996.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH.
D) DRAWING FILENAME: MKT-MAA06AREV6

30°


0.46
0.26
SCALE: 60X

Figure 9. 6-LEAD, SC70, EIAJ SC-88, 1.25MM WIDE

(C) 2007 Fairchild Semiconductor Corporation
2N7002DW Rev. 1.2

www.fairchildsemi.com
5

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OPTOLOGIC(R)

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Datasheet contains the design specifications for product development. Specifications may change
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Rev. I73

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