To nie tylko tranzystor, to tranzystor cyfrowy. :arrow: Tranzystor Darlington :arrow: Poprawiłem TONI_2003
BDW93C
BDW94B/BDW94C
®
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
s
s
s
STMicroelectronics PREFERRED
SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
3
1
DESCRIPTION
The BDW93C is a silicon Epitaxial-Base NPN
power transistor in monolithic Darlington
configuration mounted in Jedec TO-220 plastic
package. It is intented for use in power linear and
switching applications.
The complementary PNP type is BDW94C.
Also BDW94B is a PNP type.
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 10 KΩ
R2 Typ. = 150 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
NPN
PNP
Un it
BDW93C
BDW94B
BDW94C
V CBO
Collector-Base Voltage (IE = 0)
80
100
V
V CEO
Collector-Emitter Voltage (IB = 0)
80
100
V
IC
Collector Current
ICM
IB
P tot
Ts tg
Tj
12
A
Collector Peak Current
15
A
Base Current
0.2
A
80
W
T otal Dissipation at Tc ≤ 25 C
Storage Temperature
o
Max. Operating Junction Temperature
-65 to 150
o
C
150
o
C
For PNP types voltage and current values are negative.
October 1999
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BDW93C/BDW94B/BDW94C
THERMAL DATA
R thj -case
Thermal Resistance Junction-case
o
1.56
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbo l
I CBO
Parameter
Collector Cut-off
Current (IE = 0)
Test Con ditions
Min.
Typ.
Unit
for BDW94B
for BDW93C/94C
T case = 150 o C
for BDW94B
for BDW93C/94C
V CB = 80 V
VCB = 100 V
100
100
µA
µA
V CB = 80 V
VCB = 100 V
5
5
mA
mA
V CE = 80 V
VCE = 100 V
1
1
mA
mA
2
mA
I CEO
Collector Cut-off
Current (IB = 0)
for BDW94B
for BDW93C/94C
IEBO
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
V CEO(s us) ∗ Collector-Emitt er
Sustaining Voltage
(I B = 0)
Max.
I C = 100 mA
for BDW94B
for BDW 93C/94C
80
100
V
V
V CE(sat) ∗
Collector-Emitt er
Saturation Voltage
IC = 5 A
I C = 10 A
I B = 20 mA
I B = 100 mA
2
3
V
V
V BE(sat) ∗
Base-Emitter
Saturation Voltage
IC = 5 A
I C = 10 A
I B = 20 mA
I B = 100 mA
2.5
4
V
V
DC Current G ain
IC = 3 A
IC = 5 A
I C = 10 A
V CE = 3 V
V CE = 3 V
V CE = 3 V
h FE∗
VF *
Parallel-diode Forward
Voltage
IF = 5 A
I F = 10 A
h fe
Small Signal Current
Gain
IC = 1 A
f = 1 MHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
2/6
1000
750
100
20K
1.3
1.8
V CE = 10 V
20
2
4
V
V
BDW93C/BDW94B/BDW94C
Safe Operating Area
DC Current Gain (NPN types)
Collector Emitter Saturation Voltage (NPN types)
DC Transconductance(NPN types)
Collector Emitter Saturation Voltage (NPN types)
Collector Emitter Saturation Voltage (PNP types)
3/6
BDW93C/BDW94B/BDW94C
Saturated Switching Characteristics (NPN types)
Saturated Switching Characteristics (PNP types)
Collector Emitter Saturation Voltage (PNP types)
DC Current Gain (PNP types)
DC Transconductance(PNP types)
4/6
BDW93C/BDW94B/BDW94C
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
MAX.
MIN.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
TYP.
inch
1.27
TYP.
MAX.
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
P011C
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BDW93C/BDW94B/BDW94C
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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