Po oznaczeniu to tranzystor NPN 1 -Baza, 2-Kolektor, 3-Emiter.
R
深圳市晶导电子有限公司
13005
ShenZhen Jingdao Electronic Co.,Ltd.
Bipolar Junction Transistor
www.jdsemi.cn
◆Si NPN
◆RoHS COMPLIANT
1．APPLICATION
Fluorescent Lamp、Electronic Ballast、
Charger and Switch-mode power supplies
2．FEATURES
High voltage capability
Features of good high temperature
High switching speed
3．PACKAGE
TO-220
4．Electrical Characteristics
1 Base(B) 2 Collector(C) 3 Emitter(E)
4.1 Absolute Maximum Ratings
Tamb= 25℃ unless specified
PARAMETER
Collector-Base Voltage
Collector-Emittor Voltage
Emittor- Base Voltage
Collector Current
Ta=25℃
Power Dissipation
Tc=25℃
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
VALUE
700
400
9
4
2
65
150
-55～150
UNIT
V
V
V
A
W
℃
℃
4.2 Electrical Parameter
Tamb= 25℃ unless specified
PARAMETER
Collector-Base Voltage
Collector-Emittor Voltage
Emittor-Base Voltage
Collector-Base Cutoff Current
Collector-Emittor Cutoff Current
Emittor-Base Cutoff Current
DC Current Gain
Collector-Emittor Saturation Voltage
Base-Emittor Saturation Voltage
Rising Time
Falling Time
Storage Time
Typical Frequency
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
hFE*
VCE sat*
VBE sat*
tr
tf
ts
fT
TEST CONDITION
IC=1mA，IE=0
IC=1mA，IB=0
IE=1mA，IC=0
VCB=700V, IE=0
VCE=400V, IB=0
VEB=9V, IC=0
VCE=5V, IC=1mA
VCE=5V, IC=1A
IC=2A, IB=1A
IC=2A, IB=1A
MIN
700
400
9
UNIT
10
20
10
8
15
IC=500mA (UI9600)
2.0
VCE=10V,IC=0.1A,
f=1MHz
VALUE
TYP MAX
5
V
V
V
μA
μA
μA
30
0.6
1.2
0.8
0.6
4.0
V
V
μs
μs
μs
MHz
＊: Pulse test tp≤300μs,δ≤2%
Add： 1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel：0755-29799516
Fax：0755-29799515
第1页
2013 版
R
深圳市晶导电子有限公司
13005
ShenZhen Jingdao Electronic Co.,Ltd.
Bipolar Junction Transistor
www.jdsemi.cn
5. Characteristic Curve
SOA（DC）
（ ）
Fig1
Ptot–T
–
Fig2
65
10
Ptot-Tc
Ta=25℃
52
IC (A)
Ptot (W)
1.0
39
26
0.1
13
0.01
1
10
100
0
1000
Ptot-Ta
0
Fig3
150
100
50
VCE (V)
Tc ( C)
Static Characteristic
Fig4
hFE-IC
100
3.0
Ta=25℃
Ta=25℃
hFE
IC (A)
IB=200mA
1.5
10
IB=40mA
IB=20mA
0
5
VCE (V)
0
VCE=5V
1
1mA
10
Fig5 VCEsat-IC
0.1
IC (A)
1
10
Fig6 VBEsat-IC
10
1.5
Ta=25℃
IC/IB=2
VBEsat (V)
Ta=25℃
IC/IB=2
VCEsat (V)
0.01
1
1.0
0.1
0.01
0.1
1
0.5
0.1
10
1
10
Ic (A)
Ic (A)
Add： 1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel：0755-29799516
Fax：0755-29799515
第2页
2013 版
R
深圳市晶导电子有限公司
www.jdsemi.cn
13005
ShenZhen Jingdao Electronic Co.,Ltd.
Bipolar Junction Transistor
6．Package Dimentions(Unit：mm)
：
TOTO-220
Add： 1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel：0755-29799516
Fax：0755-29799515
第3页
2013 版