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TDA7386
®
4 x 40W QUAD BRIDGE CAR RADIO AMPLIFIER
HIGH OUTPUT POWER CAPABILITY:
4 x 45W/4Ω MAX.
4 x 40W/4Ω EIAJ
4 x 28W/4Ω @ 14.4V, 1KHz, 10%
4 x 24W/4Ω @ 13.2V, 1KHz, 10%
LOW DISTORTION
LOW OUTPUT NOISE
ST-BY FUNCTION
MUTE FUNCTION
AUTOMUTE AT MIN. SUPPLY VOLTAGE DETECTION
LOW EXTERNAL COMPONENT COUNT:
– INTERNALLY FIXED GAIN (26dB)
– NO EXTERNAL COMPENSATION
– NO BOOTSTRAP CAPACITORS
PROTECTIONS:
OUTPUT SHORT CIRCUIT TO GND, TO VS,
ACROSS THE LOAD
VERY INDUCTIVE LOADS
OVERRATING CHIP TEMPERATURE WITH
SOFT THERMAL LIMITER
LOAD DUMP VOLTAGE
FORTUITOUS OPEN GND
FLEXIWATT25
ORDERING NUMBER: TDA7386
REVERSED BATTERY
ESD
DESCRIPTION
The TDA7386 is a new technology class AB
Audio Power Amplifier in Flexiwatt 25 package
designed for high end car radio applications.
Thanks to the fully complementary PNP/NPN output configuration the TDA7386 allows a rail to rail
output voltage swing with no need of bootstrap
capacitors. The extremely reduced components
count allows very compact sets.
BLOCK AND APPLICATION DIAGRAM
Vcc1
Vcc2
470µF
100nF
ST-BY
N.C.
MUTE
OUT1+
IN1
OUT10.1µF
PW-GND
OUT2+
IN2
OUT20.1µF
PW-GND
OUT3+
IN3
OUT30.1µF
PW-GND
OUT4+
IN4
OUT40.1µF
PW-GND
AC-GND
0.47µF
SVR
TAB
S-GND
47µF
D99AU1018
October 1999
1/9
TDA7386
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
Operating Supply Voltage
18
V
VCC (DC)
DC Supply Voltage
28
V
VCC (pk)
Peak Supply Voltage (t = 50ms)
50
V
Output Peak Current:
Repetitive (Duty Cycle 10% at f = 10Hz)
Non Repetitive (t = 100µs)
4.5
5.5
A
A
Power dissipation, (Tcase = 70°C)
80
W
VCC
IO
Ptot
Tj
Junction Temperature
150
°C
Tstg
Storage Temperature
– 55 to 150
°C
PIN CONNECTION (Top view)
HSD
P-GND4
MUTE
OUT4-
V CC
OUT4+
OUT3-
OUT3+
P-GND3
IN3
AC-GND
IN4
IN2
S-GND
IN1
SVR
OUT1+
P-GND1
V CC
OUT1-
ST-BY
OUT2+
OUT2-
TAB
25
P-GND2
1
D94AU159A
THERMAL DATA
Symbol
2/9
Parameter
Rth j-case
Thermal Resistance Junction to Case
Value
Max.
Unit
1
°C/W
TDA7386
ELECTRICAL CHARACTERISTICS (VS = 14.4V; f = 1KHz; Rg = 600Ω; RL = 4Ω; Tamb = 25°C;
Refer to the test and application diagram, unless otherwise specified.)
Symbol
Parameter
Test Condition
VOS
Output Offset Voltage
350
mA
±80
mV
mV
27
dB
dB
Play Mode
dVOS
Min.
RL = ∞
Max.
190
±1
Quiescent Current
Typ.
±80
Iq1
During mute ON/OFF output
offset voltage
Gv
Voltage Gain
dGv
Channel Gain Unbalance
Po
Output Power
Po EIAJ
Po max.
Unit
25
26
VS = 13.2V; THD = 10%
VS = 13.2V; THD = 0.8%
VS = 14,4V; THD = 10%
22
16.5
26
24
18
28
EIAJ Output Power (*)
VS = 13.7V
37.5
40
W
Max. Output Power (*)
VS = 14.4V
43
45
W
THD
Distortion
Po = 4W
eNo
Output Noise
”A” Weighted
Bw = 20Hz to 20KHz
SVR
Supply Voltage Rejection
f = 100Hz; Vr = 1Vrms
50
75
dB
fch
High Cut-Off Frequency
PO = 0.5W
80
200
KHz
Ri
Input Impedance
70
100
CT
Cross Talk
60
70
60
ISB
St-By Current Consumption
VSt-By = 1.5V
100
µA
Ipin4
St-by pin Current
VSt-By = 1.5V to 3.5V
±10
VSB out
St-By Out Threshold Voltage
(Amp: ON)
µA
V
VSB in
St-By in Threshold Voltage
(Amp: OFF)
Mute Attenuation
POref = 4W
80
VM out
Mute Out Threshold Voltage
(Amp: Play)
3.5
VM in
Mute In Threshold Voltage
(Amp: Mute)
VAM in
VS Automute Threshold
(Amp: Mute)
Att ≥ 80dB; POref = 4W
(Amp: Play)
Att & lt; 0.1dB; PO = 0.5W
AM
0.04
0.15
%
50
70
70
100
µV
µV
KΩ
–
–
3.5
1.5
90
dB
dB
V
dB
V
1.5
V
6.5
V
7.6
VMUTE = 1.5V
(Sourced Current)
5
VMUTE = 3.5V
Ipin22
Muting Pin Current
f = 1KHz PO = 4W
f = 10KHz PO = 4W
W
W
W
-5
8.5
V
11
20
µA
20
µA
(*) Saturated square wave output.
3/9
TDA7386
Figure 1: Standard Test and Application Circuit
C8
0.1µF
C7
2200µF
Vcc1-2
Vcc3-4
6
R1
ST-BY
20
4
10K
R2
9
C9
1µF
MUTE
7
22
47K
C10
1µF
5
C1
IN1
3
0.1µF
12
17
C2 0.1µF
19
15
C3 0.1µF
21
IN4
14
S-GND
23
13
C5
0.47µF
OUT4
24
16
4/9
OUT3
18
IN3
C4 0.1µF
OUT2
2
11
IN2
OUT1
8
10
SVR
C6
47µF
25
HSD
1
TAB
D95AU335B
TDA7386
Figure 2: P.C.B. and component layout of the figure 1 (1:1 scale)
COMPONENTS &
TOP COPPER LAYER
BOTTOM COPPER LAYER
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TDA7386
Figure 3: Quiescent Current vs. Supply Voltage
Figure 4: Quiescent Output Voltage vs. Supply
Voltage
Figure 5: Output Power vs. Supply Voltage
Figure 6: Maximum Output Power vs. Supply
Voltage
Figure 7: Distortion vs. Output Power
Figure 8: Distortion vs. Frequency
6/9
TDA7386
Figure 9: Supply Voltage Rejection vs.
Frequency
Figure 10: Crosstalk vs. Frequency
Figure 11: Output Noise vs. Source Resistance
Figure 12: Power Dissipation & Efficiency vs.
Output Power
APPLICATION HINTS (ref. to the circuit of fig. 1)
SVR
Besides its contribution to the ripple rejection, the
SVR capacitor governs the turn ON/OFF time sequence and, consequently, plays an essential role
in the pop optimization during ON/OFF transients.To conveniently serve both needs, ITS
MINIMUM RECOMMENDED VALUE IS 10µF.
CMOS-COMPATIBLE. If unused, a straight connection to Vs of their respective pins would be admissible. Conventional/low-power transistors can
be employed to drive muting and stand-by pins in
absence of true CMOS ports or microprocessors.
R-C cells have always to be used in order to
smooth down the transitions for preventing any
audible transient noises.
Since a DC current of about 10 uA normally flows
out of pin 22, the maximum allowable muting-series resistance (R2) is 70KΩ, which is sufficiently
high to permit a muting capacitor reasonably
small (about 1µF).
If R2 is higher than recommended, the involved
risk will be that the voltage at pin 22 may rise to
above the 1.5 V threshold voltage and the device
will consequently fail to turn OFF when the mute
line is brought down.
About the stand-by, the time constant to be assigned in order to obtain a virtually pop-free transition has to be slower than 2.5V/ms.
INPUT STAGE
The TDA7386’s inputs are ground-compatible and
can stand very high input signals (± 8Vpk) without
any performances degradation.
If the standard value for the input capacitors
(0.1µF) is adopted, the low frequency cut-off will
amount to 16 Hz.
STAND-BY AND MUTING
STAND-BY and MUTING facilities are both
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TDA7386
DIM.
A
B
C
D
E
F (1)
G
G1
H (2)
H1
H2
H3
L (2)
L1
L2 (2)
L3
L4
L5
M
M1
N
O
R
R1
R2
R3
R4
V
V1
V2
V3
MIN.
4.45
1.80
0.75
0.37
0.80
23.75
28.90
22.07
18.57
15.50
7.70
3.70
3.60
mm
TYP.
4.50
1.90
1.40
0.90
0.39
1.00
24.00
29.23
17.00
12.80
0.80
22.47
18.97
15.70
7.85
5
3.5
4.00
4.00
2.20
2
1.70
0.5
0.3
1.25
0.50
MAX.
4.65
2.00
MIN.
0.175
0.070
1.05
0.42
0.57
1.20
24.25
29.30
0.029
0.014
0.031
0.935
1.138
22.87
19.37
15.90
7.95
0.869
0.731
0.610
0.303
4.30
4.40
0.145
0.142
inch
TYP.
0.177
0.074
0.055
0.035
0.015
0.040
0.945
1.150
0.669
0.503
0.031
0.884
0.747
0.618
0.309
0.197
0.138
0.157
0.157
0.086
0.079
0.067
0.02
0.12
0.049
0.019
MAX.
0.183
0.079
OUTLINE AND
MECHANICAL DATA
0.041
0.016
0.022
0.047
0.955
1.153
0.904
0.762
0.626
0.313
0.169
0.173
5° (Typ.)
3° (Typ.)
20° (Typ.)
45° (Typ.)
Flexiwatt25
(1): dam-bar protusion not included
(2): molding protusion included
H
H1
V3
A
H2
O
H3
R3
L4
R4
V1
R2
L2
N
L3
R
L
L1
V1
V2
R2
D
R1
L5
R1
R1
E
G
V
G1
F
M
B
C
V
FLEX25ME
8/9
M1
TDA7386
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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