MRCD2N52 to N-Channel MOSFET 500V, 2A – ten konkretny to Chiński wyrób. Dobrym i dostępnym odpowiednikiem w to miejsce jest np. FQD2N50, FQD2N50B, STD2N50, MTD2N50, MTD2N50E, PHD2N50E, lub mocniejsze STP20NM50FD (20A), STW15NB50 (14,6A), IRFR420A, IRF430 (4,5A). Można go znaleźć w żarówkach oszczędnościowych – ten na zdjęciu wymontowany z „żarówki” 11W Philipsa. W *.pdf karta katalogowa tego tranzystora. http://obrazki.elektroda.net/87_1267700198.jpg
STD2N50
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
V DSS
s
s
s
s
s
s
s
ID
500 V
STD2N50
R DS( on)
& lt; 5.5 Ω
2A
TYPICAL RDS(on) = 4.5 Ω
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100oC
APPLICATION ORIENTED
CHARACTERIZATION
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
3
1
IPAK
TO-251
(Suffix ”-1”)
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
CHOPPER REGULATORS, CONVERTERS,
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT
3
2
1
DPAK
TO-252
(Suffix ”T4”)
s
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VD S
V DG R
V GS
Value
Unit
Drain-source Voltage (V GS = 0)
Parameter
500
V
Drain- gate Voltage (R GS = 20 kΩ)
500
V
± 20
V
Gate-source Voltage
o
ID
Drain Current (continuous) at T c = 25 C
ID
Drain Current (continuous) at T c = 100 oC
ID M(•)
P tot
o
Total Dissipation at Tc = 25 C
Derating Factor
T stg
Tj
Storage Temperature
Max. Operating Junction Temperature
A
A
8
Drain Current (pulsed)
2
1.25
A
45
W
0.36
W/o C
-65 to 150
o
C
150
o
C
(•) Pulse width limited by safe operating area
December 1996
1/10
STD2N50
THERMAL DATA
R thj-cas e
Rthj- amb
Rt hc- sin k
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
o
2.78
100
1.5
275
C/W
C/W
o
C/W
o
C
o
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IA R
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max, δ & lt; 1%)
2
A
E AS
Single Pulse Avalanche Energy
(starting T j = 25 o C, ID = I AR, VD D = 50 V)
20
mJ
E AR
Repetitive Avalanche Energy
(pulse width limited by T j max, δ & lt; 1%)
1.5
mJ
IA R
Avalanche Current, Repetitive or Not-Repetitive
(T c = 100 o C, pulse width limited by T j max, δ & lt; 1%)
1.2
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V( BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I D = 250 µA
Min.
VG S = 0
Typ.
Max.
500
Unit
V
Zero Gate Voltage
V DS = Max Rating
Drain Current (V GS = 0) V DS = Max Rating x 0.8
IG SS
Gate-body Leakage
Current (V D S = 0)
25
250
T c = 125 oC
V GS = ± 20 V
µA
µA
± 100
I DS S
nA
ON (∗)
Symbol
Parameter
Test Conditions
V G S(th)
Gate Threshold Voltage V DS = V GS
R DS( on)
Static Drain-source On
Resistance
V GS = 10V
On State Drain Current
Max.
Unit
3
4
V
4.5
V DS & gt; ID( on) x RD S(on) max
V GS = 10 V
Typ.
2
5.5
Ω
ID = 1 A
I D( on)
Min.
ID = 250 µA
2
A
DYNAMIC
Symbol
gfs (∗)
C iss
C oss
C rss
2/10
Parameter
Test Conditions
Forward
Transconductance
V DS & gt; ID( on) x RD S(on) max
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
Min.
ID = 1 A
VG S = 0
Typ.
0.65
1
200
35
12
Max.
Unit
S
270
50
18
pF
pF
pF
STD2N50
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
t d(on)
tr
(di/dt) on
Qg
Q gs
Q gd
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
50
120
ns
ns
Turn-on Time
Rise Time
V DD = 200 V I D = 1 A
VGS = 10 V
R G = 50 Ω
(see test circuit, figure 3)
35
85
Turn-on Current Slope
V DD = 400 V I D = 2 A
VGS = 10 V
R G = 50 Ω
(see test circuit, figure 5)
28
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 400 V
18
5
8
25
nC
nC
nC
Typ.
Max.
Unit
25
15
45
35
25
65
ns
ns
ns
Typ.
Max.
Unit
2
8
A
A
1.5
V
ID = 2 A
V GS = 10 V
A/µs
SWITCHING OFF
Symbol
t r(Vof f)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
Min.
V DD = 400 V I D = 2 A
R G = 50 Ω VGS = 10 V
(see test circuit, figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
IS D
I SDM(•)
Source-drain Current
Source-drain Current
(pulsed)
V S D (∗)
Forward On Voltage
I SD = 2 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Min.
I SD = 2 A
di/dt = 100 A/µs
V DD = 100 V
T j = 150 o C
(see test circuit, figure 5)
t rr
Q rr
I RRM
V GS = 0
330
ns
2.5
µC
15
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/10
STD2N50
Derating Curve
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
4/10
STD2N50
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Turn-on Current Slope
Turn-off Drain-source Voltage Slope
Cross-over Time
5/10
STD2N50
Switching Safe Operating Area
Accidental Overload Area
Source-drain Diode Forward Characteristics
Fig. 1: Unclamped Inductive Load Test Circuits
6/10
Fig. 2: Unclamped Inductive Waveforms
STD2N50
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge Test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
7/10
STD2N50
TO-251 (IPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
MAX.
MIN.
A
2.2
TYP.
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A3
0.7
1.3
0.027
0.051
B
0.64
0.9
0.025
0.031
B2
5.2
5.4
0.204
0.212
B3
TYP.
MAX.
0.85
B5
0.033
0.3
0.012
B6
0.95
0.037
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
15.9
16.3
0.626
0.641
L
9
9.4
0.354
0.370
L1
0.8
1.2
0.031
0.047
L2
0.8
1
0.031
0.039
A1
C2
A3
A
C
H
B
B6
=
1
=
2
G
=
=
=
E
B2
=
3
B5
L
D
B3
L2
L1
0068771-E
8/10
STD2N50
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.2
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.9
0.025
0.035
B2
5.2
5.4
0.204
0.212
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
9.35
10.1
0.368
0.397
L2
0.8
L4
0.031
0.6
1
0.023
0.039
A1
C2
A
H
A2
C
DETAIL ”A”
L2
D
=
=
G
2
1
B2
=
=
=
E
=
3
B
DETAIL ”A”
L4
0068772-B
9/10
STD2N50
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequ
ences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical compone in life support devices or systems without express
nts
written approval of SGS-THOMSON Microelectonics.
© 1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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