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TO-220F 12A Triac
TM1241S-L, TM1261S-L
s Features
External Dimensions
)
qIsolation voltage: VISO=1500V(50Hz Sine wave, RMS)
13.0 min
qUL approved type available
4.2±0.2
C 0.5
2.8
0.2
10.0±0.2
4.0±
3.9±0.2 0.8±0.2
16.9±0.3
8.4±0.2
qRMS on-state current: IT(RMS)=12A
qGate trigger current: IGT=30mA max (MODE , ,
φ 3.3±0.2
(Unit: mm)
qRepetitive peak off-state voltage: VDRM=400, 600V
a
b
1.35±
0.15
1.35±0.15
+0.2
0.85 – 0.1
2.54
2.54
0.2
2.2±
2.4±
+0.2
0.45 – 0.1
(1). Terminal 1 (T1)
(2). Terminal 2 (T2)
(3). Gate (G)
(1) (2) (3)
0.2
a. Part Number
b. Lot Number
Weight: Approx. 2.1g
sAbsolute Maximum Ratings
Parameter
Symbol
Ratings
TM1241S-L
TM1261S-L
400
600
Unit
Conditions
Repetitive peak off-state voltage
VDRM
RMS on-state current
IT(RMS)
12.0
A
Conduction angle 360°, Tc=85°C
Surge on-state current
ITSM
120
A
50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C
Peak gate voltage
VGM
10
V
Peak gate current
IGM
2
A
Peak gate power loss
PGM
5
W
Average gate power loss
V
PG(AV)
0.5
W
Junction temperature
Tj
– 40 to +125
°C
Storage temperature
Tstg
– 40 to +125
°C
Isolation voltage
VISO
1500
Vrms
50Hz Sine wave, RMS, Terminal to Case, 1 min.
sElectrical Characteristics
Parameter
Symbol
Off-state current
min
typ
max
0.3
IDRM
On-state voltage
(Tj=25°C, unless otherwise specified)
Ratings
2.0
VTM
0.1
1.6
0.8
Gate trigger voltage
Conditions
mA
VD=VDRM, RGK=∞, Tj=25°C
V
VD=VDRM, RGK=∞, Tj=125°C
Pulse test, ITM=16A
+
0.8
2.0
Gate trigger current
16
IGT
25
VD=6V, RL=10Ω, TC=25°C
Holding current
Thermal resistance
42
VGD
IH
Rth
–
+
+
T2 , G
T2 , G
T2 , G
T2 , G
30
30
mA
VD=6V, RL=10Ω, TC=25°C
–
–
–
–
30
+
+
T2 , G
T2 , G
T2 , G
70
Gate non-trigger voltage
–
+
V
1.0
12
–
–
2.0
+
+
T2 , G
2.0
0.7
VGT
Unit
V
0.2
mA
20
3.0
°C/W
VD=1/2×VDRM, Tj=125°C
VD=6V
Junction to case
TM1241S-L, TM1261S-L
Tj=25°C
5
1
1.5
1.0
2.5
2.0
On-state voltage
3.0
100
80
6
IT(RMS) – Tc Ratings
10
50
0
100
6
4
Ambient temperature Ta (°C)
Case temperature TC (°C)
8
Tj= –40°C
Tj=25°C
0
20 40 60 80
Gate trigger current
IGT (mA)
100
75
50
25
2
(Typical)
(VD=30V, RGK=∞)
100
Full-cycle sinewave
Conduction angle : 360°
Self-supporting
Natural cooling
No wind
125
3
iGF (A)
IH temperature Characteristics
150
Full-cycle sinewave
Conduction angle :360°
125
10
0
1
Gate current
IT(RMS) – Ta Ratings
150
12
1
0
5
Number of cycle
14
2
See graph at the upper right
2
1
Full-cycle sinewave
Conduction angle :360°
3
4
40
3.5
18
50
100
75
50
+
–
(T2 – T1 )
–
+
( T2 – T1 )
10
5
25
2
8
10
12
0
14
0
0
2
4
6
8
10
12
14
Pulse trigger temperature Characteristics
103
1.0
0.5
0.5 1
103
1.5
0.2
0.5 1
10 2
10
Pulse width
0.5
0.5 1
103
Tj= – 40°C
–20°C
tw
0°C
25°C
50°C
75°C
100°C
125°C
10
5
1
0.5
0.2
0.5 1
10 2
10
Pulse width
103
0.8
0.6
0.4
0.2
25
50
75
100
125
1
0.5
0.2
0.5 1
10
5
–40
0
25
50
75
10 2
10
100
Junction temperature Tj (°C)
125
103
t w (µs)
Transient thermal resistance
Characteristics
100
rth (°C/W)
(T2–, G– )
(T2+, G– )
(T2+, G+ )
1
0
Junction temperature Tj (°C)
5
Transient thermal resistance
Gate trigger current IGT (mA)
1.0
(VD=6V, RL=10Ω)
MODE
MODE
MODE
10
Pulse width
(Typical)
50
igt
Tj= – 40°C
–20°C
tw
0°C
25°C
50°C
75°C
100°C
125°C
t w (µs)
IGT temperature characteristics
(T2–,G– )
(T2+,G+ )
(T2+,G– )
103
(MODE – )
(Typical)
MODE
MODE
MODE
10 2
10
30
VGT temperature characteristics
1.2
125
Pulse width tw (µs)
igt
t w (µs)
(VD=6V, RL=10Ω)
100
1.0
trigger
igt (Gateand tw current )
at Tj
(
i
10 2
10
)
(
trigger
igt (Gateand tw current )
at Tj
1
0.5
75
Tj= – 40°C
vgt
–20°C
0°C
tw
25°C
50°C
75°C
100°C
125°C
(MODE – )
trigger
IGT DC gateat 25°C
current
)
5
)
(
10
50
)
v
1.5
30
Tj= – 40°C
tw
–20°C
0°C
25°C
50°C
75°C
100°C
125°C
25
igt (Typical)
30
igt
0
Junction temperature Tj (°C)
(MODE – )
vgt
Tj= – 40°C
–20°C
0°C
tw
25°C
50°C
75°C
100°C
125°C
(MODE – )
trigger
IGT DC gateat 25°C
current
2
–40
3.0
Pulse width tw (µs)
Pulse trigger temperature Characteristics
gt Gate trigger current
at Tj and tw
2.5
2.0
2.0
Pulse width tw (µs)
0
–40
2.0
trigger
vgt ( Gateand tw voltage)
at Tj
)
(
trigger
VGT DC gateat 25°C
voltage
trigger
vgt ( Gateand tw voltage)
at Tj
)
)
(
trigger
VGT DC gateat 25°C
voltage
gt Gate trigger voltage
at Tj and tw
(
10 2
10
1.5
(MODE – )
1.0
0.5
0.5 1
1.0
vgt (Typical)
Tj= – 40°C
vgt
–20°C
0°C
tw
25°C
50°C
75°C
100°C
125°C
1.5
0.5
RMS on-state current IT(RMS) (A)
(MODE – )
2.0
0
RMS on-state current IT(RMS) (A)
)
6
(
4
trigger
VGT DC gateat 25°C
voltage
2
RMS on-state current IT(RMS) (A)
(
0
trigger
IGT DC gateat 25°C
current
0
Gate trigger voltage VGT (V)
8
60
vT ( V )
IT(RMS) – PT(AV) Characteristics
16
vGF (V)
120
Holding current IH (mA)
0.5
0.5
10
10 ms
1cycle
Gate voltage
Surge on-state current ITSM (A)
iT (A)
On-state current
10
140
W
=5
P GM
Tj=125°C
12
Initial junction temperature
Tj=125°C
ITSM
Tj= –20°C
160
50
Average on-state power PT(AV) (W)
Gate Characteristics
ITSM Ratings
100
Gate trigger voltage VGT (V)
vT – iT Characteristics (max)
Junction to
operating
environment
10
Junction to
case
1
0.1
0.1
1
10
10 2
10 3
10 4
10 5
t, Time (ms)
43