Tyrystory w metalowej obudowie są coraz trudniej dostępne, o zamiennik będzie trudno (parametry elektryczne, obudowa, gwint). T32-25-04 ma niestety dużo mniejszą czułość bramki - wg skróconych danych z TME Igt=150mA, wg załączonego datsheet producenta to 75mA - nadal 3x więcej niż oryginał, na co proponuję zwrócić uwagę (czy sterowanie tyrystora da radę). Ewentualnie zbliżony typ w podobnej obudowie, również o mniejszej czułości bramki: 25RIA120M http://docs-europe.electrocomponents.com/webdocs/0063/0900766b80063470.pdf - należy porównać parametry, gwint i kierunek A-K. W innych obudowach: 2N6509 http://bns.com.pl/data/files/2N6509/2N6509.pdf BT145-800R http://mselektronik.pl/attchmentdownload/download/download/?d=0&file=custom%2Fupload%2FFile-1360783821.pdf BTA24/BTA25/BTA26 http://www.st.com/web/en/resource/technical/document/datasheet/CD00002264.pdf
T32-25
Phase Control Thyristor
KKT3225, July 2005 version
Thyristors type T32 are designed for use in power electronic circuits and equipment under normal operating
conditions.
KEY PARAMETERS
UDRM, URRM
IT(AV)
ITSM
du/dt*
di/dt
up to 1400 V
25 A
350 A
500 V/s
50 A/s
* maximum (non standard) value
FEATURES
all diffused design
high current capabilities
low gate current
low thermal impedance
tested according to IEC standards
compact size and small weight
APPLICATION
Outline type code:
TO-48
See package details for further information
Power Drives
DC Motor Control
High Voltage Power Supplies
Designed for use in high power industrial and commercial power electronic circuits.
Zakłady Elektronowe LAMINA S.A.
Puławska 34
PL-05-500 Piaseczno
POLAND
Tel.: +48-22-7572731
Tel.: +48-22-3989409
Fax.: +48-22-3989407
e-mail: sekretariat@lamina.com.pl
www.lamina.com.pl
1/6
T32-25
Phase Control Thyristor
KKT3225, July 2005 version
ORDERING INFORMATION
When ordering please refer to device code builder presented below.
Please use the complete part number when ordering, quote or in any future correspondence relating to your
order.
T32-25-
voltage class (hundreds of volts)
This is standard device, with no dynamic parameters specified and standard accessory set.
Please refer to Electrical Parameters if specific dynamic demands have to be met.
ELECTRICAL PARAMETERS
Voltage ratings
UDRM, URRM
URSM
IDRM, IRRM
V
V
mA
04
400
500
06
600
700
08
800
900
10
1000
1100
12
1200
1300
14
1400
1500
Voltage class
7
du/dt group codes
du/dt
Group code
V/s
0
no specified value
4
200
5
320
6
500
Zakłady Elektronowe LAMINA S.A.
Puławska 34
PL-05-500 Piaseczno
POLAND
Tel.: +48-22-7572731
Tel.: +48-22-3989409
Fax.: +48-22-3989407
e-mail: sekretariat@lamina.com.pl
www.lamina.com.pl
2/6
T32-25
Phase Control Thyristor
KKT3225, July 2005 version
Electrical properties
Parameter
Average on-state current
Unit
IT(AV)
Value
A
Tc
Test conditions
°C
Case temperature
Surge forward current
ITSM
A
I2t
V
Treshold voltage
UT(T0)
V
Slope resistance
rT
mΩ
Latching current
Il
mA
Holding current
IH
80
Tj=125°C, UR=0,8URRM,
tp=10ms
A2s
UTM
25
I2t – value
On-state voltage max.
350
612
Tj=25°C, ITM=50A
1,5
1,15
7
Tj=25°C, UD=12V
150
mA
Tj=25°C, UD=12V
80
Tj=125°C, ITM=50A,
diR/dt=5A/s, du/dt=20V/s,
UD=0,67UDRM, URM=100V
100
Circuit commutated turn-off
time (typical)
tq
s
Turn-0n time (typical)
ton
s
ITM=IT(AV), UDM=100V
5
50
Rate of rise of on-state currentrepetitive
di/dt
A/s
Tj=125°C, ITM=3IT(AV),
UD=0,67UDRM, f=50Hz, IGM=1A,
diG/dt=1A/s
Critical rate of raise of off-state
voltage
du/dt
V/s
Tj=125°C, UD=0,67UDRM,
200 - 500
Gate current to trigger
IGT
mA
Tj=25°C, UD=12V
75
Gate voltage to trigger
UGT
V
Tj=25°C, UD=12V
3
Unit
Test conditions
Value
DC
1,0
Termal properties
Parameter
Thermal resistance, junction to
case
RthJC
°C/W
Operating junction temperature
Tjmin...Tjmax
°C
-25...+125
Tstg
°C
-25...+125
Storage temperature
Mechanical properties
Parameter
Unit
Value
Mounting torque
M
Nm
2 ... 2,5
Weight
m
g
14
Zakłady Elektronowe LAMINA S.A.
Puławska 34
PL-05-500 Piaseczno
POLAND
Tel.: +48-22-7572731
Tel.: +48-22-3989409
Fax.: +48-22-3989407
e-mail: sekretariat@lamina.com.pl
www.lamina.com.pl
3/6
T32-25
Phase Control Thyristor
KKT3225, July 2005 version
Package details
For further package information, please contact Sales & Marketing Department. All dimensions in mm, unless
stated otherwise.
Do not scale.
Zakłady Elektronowe LAMINA S.A.
Puławska 34
PL-05-500 Piaseczno
POLAND
Tel.: +48-22-7572731
Tel.: +48-22-3989409
Fax.: +48-22-3989407
e-mail: sekretariat@lamina.com.pl
www.lamina.com.pl
4/6
T32-25
Phase Control Thyristor
KKT3225, July 2005 version
CHARACTERISTICS
PT(AV), [W]
PT(AV), [W]
50
60
DC
50
o
180
40
o
180
o
120
40
o
90
30
o
120
o
90
o
60
o
60
30
o
30
o
30
20
20
10
10
Q
Q
0
0
0
5
10
15
20
25
30
0
IT(AV), [A]
Power loss characteristics. Sinus wave form.
o
TC, [ C]
5
10
15
20
25
30
35
40
IT(AV), [A]
Power loss characteristics. Square wave form.
o
TC, [ C]
130
130
120
120
110
110
Q
Q
100
100
90
o
30
90
o
o
60
o
30
80
o
90
60
o
90
o
120
o
120
80
o
70
5
10
15
20
Case temperature ratings. Sinus wave form.
25
DC
70
180
0
o
180
60
30
0
5
10
15
20
25
30
IT(AV), [A]
Case temperature ratings. Square wave form.
Zakłady Elektronowe LAMINA S.A.
Puławska 34
PL-05-500 Piaseczno
POLAND
Tel.: +48-22-7572731
Tel.: +48-22-3989409
Fax.: +48-22-3989407
e-mail: sekretariat@lamina.com.pl
www.lamina.com.pl
5/6
35
40
IT(AV), [A]
T32-25
Phase Control Thyristor
KKT3225, July 2005 version
ITSM, [kA]
UTM, V
0,36
3,5
0,34
Tj=Tjmax
0,32
3,0
Tj=Tjmax
UR=0,8URRM
0,30
0,28
2,5
0,26
0,24
2,0
0,22
0,20
1,5
0,18
0,16
1
10
100
1,0
10
100
n
Non-repetitive surge current rating
ITM, A
On-state characteristic
u G, A
o
Zth(t), C/W
10
20V; 20
101
1
UGT
10-2
10-1
Gate trigger characteristics
Zakłady Elektronowe LAMINA S.A.
Puławska 34
PL-05-500 Piaseczno
POLAND
Tel.: +48-22-7572731
Tel.: +48-22-3989409
Fax.: +48-22-3989407
e-mail: sekretariat@lamina.com.pl
www.lamina.com.pl
6/6
W
IGT
IGD
t, s
Transient thermal impedance
5
10-1
10-3
10
=
1
M
0,1
PG
0,01
o
0,001
Tj= -40 C
o
0,01
0,0001
o
Ti= 125 C
UGD
Tj= 25 C
100
0,1
100
101
iG , V