Raczej nie ? Strona Fujitsu milczy o tym układzie Link Jak potrafisz znależć gdzie jaki pin. np. to: Vcc , masa GND, to na zwarcie http://obrazki.elektroda.pl/8975241300_1485890917_thumb.jpg na wej. masz chyba dwa polowe (P-ch 30V,13A, 12 mOhm)/ patrz zał. W Toshinbach stawiali też Si4835BDY (P-ch., 30V,10A, 0.014 ohm) P.s Może to coś"na wzór" MB39A119 QFN28, patrz zał.
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
Downloaded from Datasheet.su
Notice
1.
2.
3.
4.
5.
6.
7.
All information included in this document is current as of the date this document is issued. Such information, however, is
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.
Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights
of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.
No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights
of Renesas Electronics or others.
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of
semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software,
and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by
you or third parties arising from the use of these circuits, software, or information.
When exporting the products or technology described in this document, you should comply with the applicable export control
laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas
Electronics products or the technology described in this document for any purpose relating to military applications or use by
the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and
technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited
under any applicable domestic or foreign laws or regulations.
Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics
does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages
incurred by you resulting from errors in or omissions from the information included herein.
Renesas Electronics products are classified according to the following three quality grades: “Standard”, “High Quality”, and
“Specific”. The recommended applications for each Renesas Electronics product depends on the product’s quality grade, as
indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular
application. You may not use any Renesas Electronics product for any application categorized as “Specific” without the prior
written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for
which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way
liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an
application categorized as “Specific” or for which the product is not intended where you have failed to obtain the prior written
consent of Renesas Electronics. The quality grade of each Renesas Electronics product is “Standard” unless otherwise
expressly specified in a Renesas Electronics data sheets or data books, etc.
“Standard”:
8.
9.
10.
11.
12.
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual
equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots.
“High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support.
“Specific”:
Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or
systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare
intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics,
especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation
characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or
damages arising out of the use of Renesas Electronics products beyond such specified ranges.
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have
specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further,
Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to
guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a
Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire
control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because
the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system
manufactured by you.
Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental
compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable
laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS
Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with
applicable laws and regulations.
This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas
Electronics.
Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this
document or Renesas Electronics products, or if you have any other inquiries.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
Downloaded from Datasheet.su
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA2810
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
8
7
6
5
3
• Low on-state resistance
4
0.32±0.05
FEATURES
0.22±0.05
• Thin type surface mount package with heat spreader
0.10 S
3.0±0.1
0.10 M
• Built-in gate protection diode
3.3±0.15
0.9±0.05
RDS(on)2 = 23 mΩ MAX. (VGS = −4.5 V, ID = −6.5 A)
0 +0.05
–0
RDS(on)1 = 12 mΩ MAX. (VGS = −10 V, ID = −13 A)
3.15±0.1
1
2
3.3±0.15
0.65
The µ PA2810 is P-channel MOSFET designed for DC/DC converter and power
management applications of portable equipments.
• RoHS Compliant
0.35
0.2
MAXIMUM
RATINGS (TA = 25°C, All terminals are
Drain to Source Voltage (VGS = 0 V)
VDSS
−30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
#20
V
Drain Current (DC)
ID(DC)
#13
A
ID(pulse)
#78
A
PT1
1.5
1, 2, 3 : Source
4
: Gate
5, 6, 7, 8: Drain
2.34±0.1
ABSOLUTE
connected.)
W
Drain Current (pulse)
Note1
Total Power Dissipation
Note2
Total Power Dissipation (PW = 10 sec)
Note2
Single Avalanche Current
Single Avalanche Energy
°C
−13
A
EAS
Note3
W
−55 to +150
16.9
mJ
Rth(ch-A)
83.3
°C/W
Rth(ch-C)
2.4
°C/W
1.75±0.1
°C
IAS
Note3
3.8
150
Tstg
Storage Temperature
PT2
Tch
Channel Temperature
0.4±0.1
0.4±0.1
EQUIVALENT CIRCUIT
Drain
THERMAL RESISTANCE
Channel to Ambient Thermal Resistance
Note2
Channel to Case (Drain) Thermal Resistance
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
Body
Diode
Gate
Gate
Protection
Diode
Source
2. Mounted on FR-4 board of 25.4 mm x 25.4 mm x 0.8 mmt
3. Starting Tch = 25°C, VDD = −15 V, RG = 25 Ω, VGS = −20 → 0 V, L = 100 µH
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G19290EJ1V0DS00 (1st edition)
Date Published May 2008 NS
Printed in Japan
Downloaded from Datasheet.su
2008
µ PA2810
ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
−1
µA
#10
µA
−2.5
V
Zero Gate Voltage Drain Current
IDSS
VDS = −30 V, VGS = 0 V
Gate Leakage Current
IGSS
VGS = #20 V, VDS = 0 V
Gate to Source Cut-off Voltage
VGS(off)
VDS = −10 V, ID = −1 mA
−1.0
| yfs |
VDS = −10 V, ID = −6.5 A
7
RDS(on)1
VGS = −10 V, ID = −13 A
9.5
12
mΩ
RDS(on)2
VGS = −4.5 V, ID = −6.5 A
15
23
mΩ
Forward Transfer Admittance
Note
Drain to Source On-state Resistance
Note
S
Input Capacitance
Ciss
VDS = −10 V,
1860
pF
Output Capacitance
Coss
VGS = 0 V,
400
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
300
pF
Turn-on Delay Time
td(on)
VDD = −15 V, ID = −6.5 A,
11
ns
Rise Time
tr
VGS = −10 V,
19
ns
Turn-off Delay Time
td(off)
RG = 10 Ω
160
ns
Fall Time
tf
100
ns
Total Gate Charge
QG
VDD = −24 V,
40
nC
Gate to Source Charge
QGS
VGS = −10 V,
6
nC
Gate to Drain Charge
QGD
ID = −13 A
14
nC
VF(S-D)
IF = 13 A, VGS = 0 V
0.87
V
Body Diode Forward Voltage
Note
Reverse Recovery Time
trr
IF = 13 A, VGS = 0 V,
50
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/µs
40
nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
D.U.T.
L
RG = 25 Ω
RL
VDD
50 Ω
PG.
VGS = −20 → 0 V
RG
PG.
VGS(−)
VGS
Wave Form
0
VGS
10%
90%
VDD
VDS(−)
−
IAS
BVDSS
VDS
ID
VDD
VGS(−)
0
VDS
Wave Form
τ
Starting Tch
τ = 1 µs
Duty Cycle ≤ 1%
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = −2 mA
PG.
2
Downloaded from Datasheet.su
RL
50 Ω
VDD
Data Sheet G19290EJ1V0DS
VDS
90%
90%
10% 10%
0
td(on)
tr td(off)
ton
tf
toff
µ PA2810
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
FORWARD BIAS SAFE OPERATING AREA
-1000
100
80
60
40
40
60
80
100
1i 0
-10
1i 0
d
it e )
Lim 0 V
n)
1i
(o
−
S
R D GS =
(V
-1
-0.1
0
20
1i
ID(DC)
20
0
PW
ID(pulse)
-100
ID - Drain Current - A
dT - Percentage of Rated Power - %
120
er
D
TA - Ambient Temperature - °C
-0.1
=2
00
s
µs
i
m
s
i
0
m
s
i
s
i ss
ip
at
io
Single Pulse
Mounted on FR-4 board of
25.4 mm x 25.4 mm x 0.8 mmt
-0.01
-0.01
120 140 160
Po
w
1i 0
m
nL
im
it e
d
-1
-10
-100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - °C/W
1000
Rth(ch-A) = 83.3°C/Wi
100
10
Rth(ch-C) = 2.4°C/Wi
1
0.1
Single Pulse
Rth(ch-A): Mounted on FR-4 board of 25.4 mm x 25.4 mm x 0.8 mmt
0.01
100 µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
-20
-20
Pulsed
−4.5 V
−10 V
-15
ID - Drain Current - A
ID - Drain Current - A
−4.0 V
−3.8 V
-10
−3.6 V
VGS = −3.0 V
-5
−3.4 V
-15
TA = 125°C
75°C
25°C
−55°C
-10
-5
−3.2 V
0
0
0
-0.2
-0.4
-0.6
-0.8
-1
0
-1
-2
-3
-4
-5
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
Data Sheet G19290EJ1V0DS
Downloaded from Datasheet.su
VDS = −10 V
Pulsed
3
µ PA2810
-3
-2.5
-2
-1.5
-1
-0.5
VDS = −10 V
ID = −1 mA
0
-75
-25
25
75
125
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| yfs | - Forward Transfer Admittance - S
VGS(off) - Gate to Source Cut-off Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
100
TA = 125°C
75°C
25°C
−55°C
10
1
VDS = −10 V
Pulsed
0.1
-0.1
175
-1
-10
-100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
25
20
VGS = −4.5 V
15
10
−10 V
5
Pulsed
0
-0.1
-1
-10
-100
RDS(on) - Drain to Source On-state Resistance - mΩ
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
RDS(on) - Drain to Source On-state Resistance - mΩ
Tch - Channel Temperature - °C
30
ID = −13 A
Pulsed
25
20
15
10
5
0
0
-5
-10
-15
-20
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
30
10000
ID = −13 A
Pulsed
25
VGS = −4.5 V
20
15
10
−10 V
5
Ciss, Coss, Crss - Capacitance - pF
RDS(on) - Drain to Source On-state Resistance - mΩ
ID - Drain Current - A
Ciss
1000
Coss
Crss
100
0
-75
-25
25
75
125
175
Tch - Channel Temperature - °C
4
Downloaded from Datasheet.su
VGS = 0 V
f = 1 MHz
10
-0.1
-1
-10
VDS - Drain to Source Voltage - V
Data Sheet G19290EJ1V0DS
-100
µ PA2810
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
-12
IF - Diode Forward Current - A
VGS - Gate to Source Voltage - V
−10 V
-10
VDD = −6 V
−15 V
−24 V
-8
-6
-4
-2
10
VGS = −4.5 V
0V
1
ID = −13 A
Pulsed
0.1
0
0
10
20
30
0
40
QG - Gate Charge - nC
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
µ PA2810T1L-E1-AY
µ PA2810T1L-E2-AY
Note
PACKING
Note
Pure Sn
Tape 3000 p/reel
PACKAGE
8-pin HVSON (3333)
0.028 g TYP.
Note Pb-free (This product does not contain Pb in the external electrode.)
Data Sheet G19290EJ1V0DS
Downloaded from Datasheet.su
5
µ PA2810
• The information in this document is current as of May, 2008. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
• NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: " Standard " , " Special " and
" Specific " .
The " Specific " quality grade applies only to NEC Electronics products developed based on a customerdesignated " quality assurance program " for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
" Standard " : Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
" Special " : Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
" Specific " : Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is " Standard " unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1) " NEC Electronics " as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) " NEC Electronics products " means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1
Downloaded from Datasheet.su