VNH7013XPTR-E.pdf

Pytanie o Datasheet VNH7013

Witam wszystkich, mam pytanie odnośnie informacji w Datasheet VNH7013 (Chcę wiedzieć czy napięciem 5V z kontrolera mogę sterować tym kładem a mam zbieżne informacje) 1. 10 V compatible inputs - mam rozumieć że wejścia są sterowane 10V czy do 10V?! 2. W tab.5 VGs(th) min:2V max4V - mam rozumieć że bramka może być zasilana max:4V !?


VNH7013XP-E
Automotive integrated H-bridge
Features
Type

RDS(on)

Iout

Vccmax

VNH7013XP-E

13 m? typ
(per leg)

40 A

72 V(1)

1. Per leg: sum of the two BVdss (HSD + LSD);
VCC & gt; 36 V whole bridge must be switched off;
?

Maximum VCC voltage: 72 V

?

10 V compatible inputs

?

RDS(on) per leg: 13 m? typical

?

Embedded thermal sensor: -8.1 mV/°K

?

Very low stray inductance in power line

PowerSSO-36 TP

Description
The VNH7013XP-E is an automotive integrated
H-bridge intended for a wide range of automotive
applications driving DC motors. The device
incorporates a dual channel and two single
channel MOSFETs. All the devices are designed
using STMicroelectronics(R) well known and
proven proprietary VIPower(R) M0-S7 technology
that allows to integrate in a package four different
channels in H-bridge topology.
This package, specifically designed for the harsh
automotive environment offers improved thermal
performance thanks to exposed die pads.
Moreover, its fully symmetrical mechanical design
allows superior manufacturability at board level.

Table 1.

Device summary
Order codes
Package
Tube
PowerSSO-36 TP

January 2012

Tape and reel

VNH7013XP-E

VNH7013XPTR-E

Doc ID 022370 Rev 3

1/24
www.st.com

1

Contents

VNH7013XP-E

Contents
1

Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2

Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.1
2.2

3

Absolute maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Package and PCB thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.1

PowerSSO-36 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.1.1
3.1.2

Thermal resistances definition (values according to the PCB heatsink
area) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

3.1.3

Thermal calculation in transient mode . . . . . . . . . . . . . . . . . . . . . . . . . . 17

3.1.4

4

Thermal calculation in clockwise and anti-clockwise operation in steadystate mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Single pulse thermal impedance definition (values according to the PCB
heatsink area) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.1
4.2

2/24

PowerSSO-36 TP package information . . . . . . . . . . . . . . . . . . . . . . . . . . 20

4.3

5

ECOPACK(R) packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

PowerSSO-36 TP packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

Doc ID 022370 Rev 3

VNH7013XP-E

List of tables

List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
Table 13.
Table 14.
Table 15.
Table 16.
Table 17.

Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pin definitions and functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Absolute maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Power off. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Power on. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Gate resistance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Source drain diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Switching on HSD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Switching on LSD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Switching off HSD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Switching off LSD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Thermal sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Thermal calculation in clockwise and anti-clockwise operation in steady-state mode . . . . 16
Thermal parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
PowerSSO-36 TP mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

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List of figures

VNH7013XP-E

List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.

4/24

Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Configuration diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Single pulse maximum current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Gate charge vs gate-source voltage HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Gate charge vs gate-source voltage LS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Capacitance variations HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Capacitance variations LS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Thermal sensor voltage vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Gate charge test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Test circuit for inductive load switching and diode recovery times . . . . . . . . . . . . . . . . . . . 13
Switching times test circuit for resistive load. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
PowerSSO-36 PC board. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Chipset configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Auto and mutual Rthj-amb vs PCB copper area in open box free air condition . . . . . . . . . . 16
PowerSSO-36 HSD thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . 18
PowerSSO-36 LSD thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . 18
Thermal fitting model of an H-bridge in PowerSSO-36. . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
PowerSSO-36 TP package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
PowerSSO-36 TP tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
PowerSSO-36 TP tape and reel shipment (suffix "TR") . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Doc ID 022370 Rev 3

VNH7013XP-E

Block diagram and pin description
Block diagram

Figure 2.

Configuration diagram

Gate 4
Drain4
Source4
Source4
Source4
Source4
Source4
Drain4
Source4
TSA+
Source2
Source2
Drain2
Source2
Source2
Source2
Source2
Gate 2

Drain M3

Figure 1.

Drain M4

1

Block diagram and pin description

Drain M1,M2

Doc ID 022370 Rev 3

Gate 3
Drain3
Source3
Source3
Source3
Source3
Source3
Drain3
Source3
TSKTSASource1
Source1
Drain1
Source1
Source1
Source1
Source1
Gate 1

5/24

Block diagram and pin description
Table 2.

VNH7013XP-E

Pin definitions and functions

Pin number
1

Gate 4

Gate of the LSD 4

2, 8

Drain 4

Drain of the LSD 4

3, 4, 5, 6, 7, 9

Source 4

10

TSA+

11, 12, 14, 15,
16, 17

Source 2

13

Drain 2

Drain of the HSD 2

18

Gate 2

Gate of the HSD 2

19

Gate 1

Gate of the HSD 1

20, 21, 22, 23,
25, 26

Source 1

24

Drain 1

27

TSK-

28, 30, 31, 32,
33, 34

Source 3

29, 35

Drain 3

Drain of the LSD 3

36

6/24

Symbol

Function

Gate 3

Gate of the LSD 3

Source of the LSD 4
Thermal sensor anode
Source of the HSD 2

Source of the HSD 1
Drain of the HSD 1
Thermal sensor cathode
Source of the LSD 3

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VNH7013XP-E

Electrical specifications

2

Electrical specifications

2.1

Absolute maximum rating
Table 3.

Absolute maximum rating

Symbol

Parameter

Value

Unit

VCC

Supply voltage (whole bridge switched off)

72

V

Imax

Maximum output current (continuous)

40

A

Maximum gate source voltage

18

V

VGS_max

Maximum Single Pulse output current

(1)

80

A

Tj

Junction operating temperature

175

°C

Tc

Case operating temperature

-40 to 150

°C

Storage temperature

-55 to 150

°C

40

A

IPulse_max

TSTG
IS

Diode continuous forward current

1. Pulse duration = 20 ms (seeFigure 3).

Figure 3.

Single pulse maximum current

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Electrical specifications

2.2

VNH7013XP-E

Electrical characteristics
Tj = 25 °C, unless otherwise specified.
Table 4.
Symbol
V(BR)DSS

IDSS

IGSS

Table 5.
Symbol

Power off
Parameter

Test conditions

Drain-source breakdown
voltage

ID = 10 mA, VGS = 0 V

Typ.

36

--
100

uA

VDS = 28 V; Tj = 25 °C

--

10

uA

--

?100

nA

Gate-source leakage current
VGS = ?10 V
(VDS=0V)

Power on
Parameter

Test conditions

dVGS(th)/dT
RDS(on) HS

Static drain-source on
resistance

VGS = 10 V; ID = 5 A; Tj = 25 °C

RDS(on) LS

Static drain-source on
resistance

Min. Typ. Max.

Gate threshold voltage
VDS = VGS; ID = 1 mA
temperature derating

VGS = 10 V; ID = 5 A; Tj = 25 °C

Symbol

V

--

Gate threshold voltage VDS = VGS; ID = 1 mA

Table 6.

Max. Unit

VDS = 28 V;
-40 °C & lt; Tj & lt; 150 °C

Zero gate voltage drain
current (VGS=0V)

VGS(th)

2

4

Unit
V

7.5

mV/°C

5.7

m?

VGS = 10 V; ID = 5 A; Tj = 150 °C

11.9
7.3

VGS = 10 V; ID = 5 A; Tj = 150 °C

m?
m?

15.1

m?

Dynamic
Parameter

Test condition

Forward transconductance

Ciss_HS

Input capacitance
VDS = 25 V; f = 1 MHz;
VGS = 0 V (see Figure 6)

Coss_HS

Output capacitance

Crss_HS

Reverse transfer capacitance

Ciss_LS

Input capacitance
VDS = 25 V; f = 1 MHz;
VGS = 0 V (see Figure 7)

Coss_LS

Output capacitance

Crss_LS

Reverse transfer capacitance

1. Pulsed: pulse duration = 300us, duty cycle 1.5%.

Doc ID 022370 Rev 3

Max.

Unit

--

20

--

S

--

17.5

--

S

1836

--

pF

--

426

--

pF

--

VDS = 15 V; ID = 20 A;
Tj = 25 °C

Typ.

55

--

pF

--

Gfs_LS(1)

Min.

--

Gfs_HS(1) Forward transconductance

8/24

Min.

1250

--

pF

--

311

--

pF

--

49

--

pF

VNH7013XP-E

Electrical specifications

Table 7.

Gate resistance

Symbol

Parameter

RG_HS

Typ.

Max.

Unit

--

Gate resistance LS

Min.

20

--

?

--

13

--

?

Min.

Typ.

Max.

Unit

--

0.9

1.1

V

--

50

ns

--

28

nC

--

0.8

A

Min.

Typ.

Max.

Unit

--

53

--

ns

--

319

--

ns

--

36

--

nC

--

8.5

--

nC

--

5

--

nC

Min.

Typ.

Max.

Unit

--

53

--

ns

--

430

--

ns

--

23

--

nC

--

6

--

nC

--

2.5

--

nC

Min.

Typ.

Max.

Unit

--

253

--

ns

--

169

--

ns

Gate resistance HS

RG_LS

Test condition

Table 8.
Symbol
VSD(1)

VDD = 15 V; fgate = 1 MHz

Source drain diode
Parameter

Test conditions
ISD = 20 A; VGS = 0 V;
Tj = 25 °C

Forward on voltage

trr

Reverse recovery time

Qrr

Reverse recovery charge

IRRM

Reverse recovery current

ISD = 20 A; di/dt = 100 A/us;
VDD = 20 V; Tj = 150 °C
(see Figure 10)

1. Pulse width limited by safe operating area.

Table 9.
Symbol
td(on)
tr

Switching on HSD
Parameter
Turn on delay time
Rise time

Qg

Total gate charge

Qgs

Gate-source charge

Qgd

Gate-drain charge

Table 10.
Symbol
td(on)
tr

Turn on delay time
Rise time

Qgs

Gate-source charge

Qgd

Gate-drain charge

td(off)
tf

VDD = 15 V; ID = 20 A;
VGS = 10 V
(see Figure 4 and Figure 9)

Parameter

Total gate charge

Symbol

VDD = 15 V; ID = 20 A;
RG = 4.7 ?; VGS = 10 V

Switching on LSD

Qg

Table 11.

Test conditions

Test conditions
VDD = 15 V; ID = 20 A;
RG = 4.7 ?; VGS = 10 V
VDD = 15 V; ID = 20 A;
VGS = 10 V
(see Figure 5 and Figure 9)

Switching off HSD
Parameter
Turn-off delay time
Fall time

Test conditions
VDD = 15 V; ID = 20 A;
RG = 4.7 ?; VGS = 10 V
(see Figure 11)

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9/24

Electrical specifications
Table 12.

Switching off LSD

Symbol
td(off)
tf

Table 13.

VNH7013XP-E

Parameter
Turn-off delay time
Fall time

Test conditions
VDD = 15 V; ID = 20 A;
RG = 4.7 ?; VGS = 10 V
(see Figure 11)

Parameter

Test conditions

VF

Chain diode forward
voltage

Tj = 25 °C; IF = 250 uA
(see Figure 8)

SF

Chain temperature
coefficient

-40 °C & lt; Tj & lt; 175 °C; IF = 250 uA

1. See Figure 8.

10/24

Typ.

Max.

Unit

--

124

--

ns

--

293

--

ns

Min.

Typ.

Max.

Unit

3.72

3.88

4.04

V

Thermal sensor(1)

Symbol

Figure 4.

Min.

Gate charge vs gate-source voltage HS

Doc ID 022370 Rev 3

-8.1

mV/°K

VNH7013XP-E

Electrical specifications

Figure 5.

Gate charge vs gate-source voltage LS

Figure 6.

Capacitance variations HS

Doc ID 022370 Rev 3

11/24

Electrical specifications
Figure 7.

Figure 8.

12/24

VNH7013XP-E

Capacitance variations LS

Thermal sensor voltage vs temperature

Doc ID 022370 Rev 3

VNH7013XP-E
Figure 9.

Electrical specifications
Gate charge test circuit

Figure 10. Test circuit for inductive load switching and diode recovery times

Doc ID 022370 Rev 3

13/24

Electrical specifications

VNH7013XP-E

Figure 11. Switching times test circuit for resistive load

14/24

Doc ID 022370 Rev 3

VNH7013XP-E

Package and PCB thermal data

3

Package and PCB thermal data

3.1

PowerSSO-36 thermal data
Figure 12. PowerSSO-36 PC board

Double layers: footprint

Double layers: 2cm2 of Cu

TBD

Double layers: 8cm2 of Cu

Four layers: Cu on top layer: 16 cm2; Cu on bottom layer: 32 cm2; Cu on middle layer: total coverage

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Package and PCB thermal data

VNH7013XP-E

Figure 13. Chipset configuration

Figure 14. Auto and mutual Rthj-amb vs PCB copper area in open box free air
condition

Note: Referred to double layer PCB

3.1.1

Thermal calculation in clockwise and anti-clockwise operation in
steady-state mode
Table 14.

Thermal calculation in clockwise and anti-clockwise operation in steadystate mode

HSA HSB LSA LSB

TjHSAB

TjLSA

TjLSB

ON OFF OFF ON

PdHSA x RthHSLS + PdLSB
x RthLS + Tamb

OFF ON

16/24

PdHSA x RthHS + PdLSB PdHSA x RthHSLS +
x RthHSLS + Tamb
PdLSB x RthLSLS + Tamb
PdHSB x RthHS + PdLSA PdHSB x RthHSLS +
x RthHSLS + Tamb
PdLSA x RthLS + Tamb

PdHSB x RthHSLS + PdLSA
x RthLSLS + Tamb

ON OFF

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VNH7013XP-E

3.1.2

Package and PCB thermal data

Thermal resistances definition (values according to the PCB heatsink
area)
RthHS = RthHSA = RthHSB = High Side Chip Thermal Resistance Junction to Ambient (HSA or
HSB in ON state)
RthLS = RthLSA = RthLSB = Low Side Chip Thermal Resistance Junction to Ambient
RthHSLS = RthHSALSB = RthHSBLSA = Mutual Thermal Resistance Junction to Ambient
between High Side and Low Side Chips
RthLSLS = RthLSALSB = Mutual Thermal Resistance Junction to Ambient between Low Side
Chips

3.1.3

Thermal calculation in transient mode(a)
TjHSAB = ZthHS x PdHSAB + ZthHSLS x (PdLSA + PdLSB) + Tamb
TjLSA = ZthHSLS x PdHSAB + ZthLS x PdLSA + ZthLSLS x PdLSB + Tamb
TjLSB = ZthHSLS x PdHSAB + ZthLSLS x PdLSA + ZthLS x PdLSB + Tamb

3.1.4

Single pulse thermal impedance definition (values according to the
PCB heatsink area)
ZthHS = High Side Chip Thermal Impedance Junction to Ambient
ZthLS = ZthLSA = ZthLSB = Low Side Chip Thermal Impedance Junction to Ambient
ZthHSLS = ZthHSABLSA = ZthHSABLSB = Mutual Thermal Impedance Junction to Ambient
between High Side and Low Side Chips
ZthLSLS = ZthLSALSB = Mutual Thermal Impedance Junction to Ambient between Low Side
Chips
Equation 1: pulse calculation formula
Z TH? = R TH ? ? + Z THtp ( 1 - ? )
where ? = t p / T

a.

Calculation is valid in any dynamic operating condition. Pd values set by user.

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17/24

Package and PCB thermal data
Figure 15.

VNH7013XP-E

PowerSSO-36 HSD thermal impedance junction ambient single pulse

Figure 16. PowerSSO-36 LSD thermal impedance junction ambient single pulse

18/24

Doc ID 022370 Rev 3

VNH7013XP-E

Package and PCB thermal data

Figure 17. Thermal fitting model of an H-bridge in PowerSSO-36

Table 15.

Thermal parameters(1)

Area/island (cm2)

Footprint

R1 = R7 (°C/W)

8

4L

0.2

R2 = R8 (°C/W)

2

1.6

R3 (°C/W)

8

R4 (°C/W)

30

16

16

10

R5 (°C/W)

40

22

12

5

R6 (°C/W)

36

28

10

6

R9 = R15 (°C/W)

0.1

R10 = R16 (°C/W)

2.8

R11 = R17 (°C/W)

22

14

14

14

R12 = R18 (°C/W)

49

30

30

20

R13 = R19 (°C/W)

52

36

28

16

R14 = R20 (°C/W)

50

32

26

18

R21 = R22 (°C/W)

80

60

50

40

R23 (°C/W)

80

50

45

30

0.8

C1 = C7 = C9 = C15 (W.s/°C)

0.001

C2 = C8 (W.s/°C)

0.009

C3 (W.s/°C)

0.09

C4 (W.s/°C)

0.5

0.8

0.8

C5 (W.s/°C)

0.8

1.4

2

3

C6 (W.s/°C)

5

6

8

10

C10 = C16 (W.s/°C)

0.1

C11 = C17 (W.s/°C)

0.07

C12 = C18 (W.s/°C)

0.45

0.45

0.45

0.6

C13 = C19 (W.s/°C)

0.8

1

1.2

2.5

C14 = C20 (W.s/°C)
C21 = C22 = C23 (W.s/°C)

4

5

6

8

0.01

0.006

0.005

0.005

1. The blank space means that the value is the same as the previous one.

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Package and packing information

VNH7013XP-E

4

Package and packing information

4.1

ECOPACK(R) packages
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R)
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK(R) is an ST trademark.

4.2

PowerSSO-36 TP package information

Figure 18. PowerSSO-36 TP package dimensions

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Doc ID 022370 Rev 3

VNH7013XP-E

Package and packing information

Table 16.

PowerSSO-36 TP mechanical data
Millimeters

Symbol
Min.

Typ.

Max.

A

2.15

2.47

A2

2.15

2.40

a1

0

0.1

b

0.18

0.36

c

0.23

0.32

D

10.10

10.50

E

7.4

7.6

e

0.5

e3

8.5

F

2.3

G
H

0.1
10.1

10.5

h

0.4

k

0 deg

8 deg

L

0.6

1

M

4.3

N

10 deg

O

1.2

Q

0.8

S

2.9

T

3.65

U

1.0

X1

1.85

2.35

Y1

3

3.5

X2

1.85

2.35

Y2

3

3.5

X3

4.7

5.2

Y3

3

3.5

Z1

0.4

Z2

0.4

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Package and packing information

4.3

VNH7013XP-E

PowerSSO-36 TP packing information
Figure 19. PowerSSO-36 TP tube shipment (no suffix)

C
B

Base Qty
Bulk Qty
Tube length (?0.5)
A
B
C (?0.1)

49
1225
532
3.5
13.8
0.6

All dimensions are in mm.

A

Figure 20. PowerSSO-36 TP tape and reel shipment (suffix "TR")

Reel dimensions
Base Qty
Bulk Qty
A (max)
B (min)
C (?0.2)
F
G (+2 / -0)
N (min)
T (max)

1000
1000
330
1.5
13
20.2
24.4
100
30.4

Tape dimensions
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
Tape width
Tape Hole Spacing
Component Spacing
Hole Diameter
Hole Diameter
Hole Position
Compartment Depth
Hole Spacing

W
P0 (?0.1)
P
D (?0.05)
D1 (min)
F (?0.1)
K (max)
P1 (?0.1)

24
4
12
1.55
1.5
11.5
2.85
2

End

All dimensions are in mm.

Start
Top
cover
tape

No components Components
500mm min

500mm min
Empty components pockets
sealed with cover tape.
User direction of feed

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No components

VNH7013XP-E

5

Revision history

Revision history
Table 17.

Document revision history

Date

Revision

Changes

07-Nov-2011

1

Initial release

18-Jan-2012

2

Changed document status from preliminary data to datasheet.

20-Jan-2012

3

Updated features list.

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VNH7013XP-E

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