Witam wszystkich, mam pytanie odnośnie informacji w Datasheet VNH7013 (Chcę wiedzieć czy napięciem 5V z kontrolera mogę sterować tym kładem a mam zbieżne informacje) 1. 10 V compatible inputs - mam rozumieć że wejścia są sterowane 10V czy do 10V?! 2. W tab.5 VGs(th) min:2V max4V - mam rozumieć że bramka może być zasilana max:4V !?
VNH7013XP-E
Automotive integrated H-bridge
Features
Type
RDS(on)
Iout
Vccmax
VNH7013XP-E
13 m? typ
(per leg)
40 A
72 V(1)
1. Per leg: sum of the two BVdss (HSD + LSD);
VCC & gt; 36 V whole bridge must be switched off;
?
Maximum VCC voltage: 72 V
?
10 V compatible inputs
?
RDS(on) per leg: 13 m? typical
?
Embedded thermal sensor: -8.1 mV/°K
?
Very low stray inductance in power line
PowerSSO-36 TP
Description
The VNH7013XP-E is an automotive integrated
H-bridge intended for a wide range of automotive
applications driving DC motors. The device
incorporates a dual channel and two single
channel MOSFETs. All the devices are designed
using STMicroelectronics(R) well known and
proven proprietary VIPower(R) M0-S7 technology
that allows to integrate in a package four different
channels in H-bridge topology.
This package, specifically designed for the harsh
automotive environment offers improved thermal
performance thanks to exposed die pads.
Moreover, its fully symmetrical mechanical design
allows superior manufacturability at board level.
Table 1.
Device summary
Order codes
Package
Tube
PowerSSO-36 TP
January 2012
Tape and reel
VNH7013XP-E
VNH7013XPTR-E
Doc ID 022370 Rev 3
1/24
www.st.com
1
Contents
VNH7013XP-E
Contents
1
Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2
Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.1
2.2
3
Absolute maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package and PCB thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.1
PowerSSO-36 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.1.1
3.1.2
Thermal resistances definition (values according to the PCB heatsink
area) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.1.3
Thermal calculation in transient mode . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.1.4
4
Thermal calculation in clockwise and anti-clockwise operation in steadystate mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Single pulse thermal impedance definition (values according to the PCB
heatsink area) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.1
4.2
2/24
PowerSSO-36 TP package information . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.3
5
ECOPACK(R) packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
PowerSSO-36 TP packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Doc ID 022370 Rev 3
VNH7013XP-E
List of tables
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
Table 13.
Table 14.
Table 15.
Table 16.
Table 17.
Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pin definitions and functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Absolute maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Power off. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Power on. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Gate resistance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Source drain diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Switching on HSD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Switching on LSD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Switching off HSD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Switching off LSD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Thermal sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Thermal calculation in clockwise and anti-clockwise operation in steady-state mode . . . . 16
Thermal parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
PowerSSO-36 TP mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Doc ID 022370 Rev 3
3/24
List of figures
VNH7013XP-E
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
4/24
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Configuration diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Single pulse maximum current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Gate charge vs gate-source voltage HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Gate charge vs gate-source voltage LS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Capacitance variations HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Capacitance variations LS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Thermal sensor voltage vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Gate charge test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Test circuit for inductive load switching and diode recovery times . . . . . . . . . . . . . . . . . . . 13
Switching times test circuit for resistive load. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
PowerSSO-36 PC board. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Chipset configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Auto and mutual Rthj-amb vs PCB copper area in open box free air condition . . . . . . . . . . 16
PowerSSO-36 HSD thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . 18
PowerSSO-36 LSD thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . 18
Thermal fitting model of an H-bridge in PowerSSO-36. . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
PowerSSO-36 TP package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
PowerSSO-36 TP tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
PowerSSO-36 TP tape and reel shipment (suffix "TR") . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Doc ID 022370 Rev 3
VNH7013XP-E
Block diagram and pin description
Block diagram
Figure 2.
Configuration diagram
Gate 4
Drain4
Source4
Source4
Source4
Source4
Source4
Drain4
Source4
TSA+
Source2
Source2
Drain2
Source2
Source2
Source2
Source2
Gate 2
Drain M3
Figure 1.
Drain M4
1
Block diagram and pin description
Drain M1,M2
Doc ID 022370 Rev 3
Gate 3
Drain3
Source3
Source3
Source3
Source3
Source3
Drain3
Source3
TSKTSASource1
Source1
Drain1
Source1
Source1
Source1
Source1
Gate 1
5/24
Block diagram and pin description
Table 2.
VNH7013XP-E
Pin definitions and functions
Pin number
1
Gate 4
Gate of the LSD 4
2, 8
Drain 4
Drain of the LSD 4
3, 4, 5, 6, 7, 9
Source 4
10
TSA+
11, 12, 14, 15,
16, 17
Source 2
13
Drain 2
Drain of the HSD 2
18
Gate 2
Gate of the HSD 2
19
Gate 1
Gate of the HSD 1
20, 21, 22, 23,
25, 26
Source 1
24
Drain 1
27
TSK-
28, 30, 31, 32,
33, 34
Source 3
29, 35
Drain 3
Drain of the LSD 3
36
6/24
Symbol
Function
Gate 3
Gate of the LSD 3
Source of the LSD 4
Thermal sensor anode
Source of the HSD 2
Source of the HSD 1
Drain of the HSD 1
Thermal sensor cathode
Source of the LSD 3
Doc ID 022370 Rev 3
VNH7013XP-E
Electrical specifications
2
Electrical specifications
2.1
Absolute maximum rating
Table 3.
Absolute maximum rating
Symbol
Parameter
Value
Unit
VCC
Supply voltage (whole bridge switched off)
72
V
Imax
Maximum output current (continuous)
40
A
Maximum gate source voltage
18
V
VGS_max
Maximum Single Pulse output current
(1)
80
A
Tj
Junction operating temperature
175
°C
Tc
Case operating temperature
-40 to 150
°C
Storage temperature
-55 to 150
°C
40
A
IPulse_max
TSTG
IS
Diode continuous forward current
1. Pulse duration = 20 ms (seeFigure 3).
Figure 3.
Single pulse maximum current
Doc ID 022370 Rev 3
7/24
Electrical specifications
2.2
VNH7013XP-E
Electrical characteristics
Tj = 25 °C, unless otherwise specified.
Table 4.
Symbol
V(BR)DSS
IDSS
IGSS
Table 5.
Symbol
Power off
Parameter
Test conditions
Drain-source breakdown
voltage
ID = 10 mA, VGS = 0 V
Typ.
36
--
100
uA
VDS = 28 V; Tj = 25 °C
--
10
uA
--
?100
nA
Gate-source leakage current
VGS = ?10 V
(VDS=0V)
Power on
Parameter
Test conditions
dVGS(th)/dT
RDS(on) HS
Static drain-source on
resistance
VGS = 10 V; ID = 5 A; Tj = 25 °C
RDS(on) LS
Static drain-source on
resistance
Min. Typ. Max.
Gate threshold voltage
VDS = VGS; ID = 1 mA
temperature derating
VGS = 10 V; ID = 5 A; Tj = 25 °C
Symbol
V
--
Gate threshold voltage VDS = VGS; ID = 1 mA
Table 6.
Max. Unit
VDS = 28 V;
-40 °C & lt; Tj & lt; 150 °C
Zero gate voltage drain
current (VGS=0V)
VGS(th)
2
4
Unit
V
7.5
mV/°C
5.7
m?
VGS = 10 V; ID = 5 A; Tj = 150 °C
11.9
7.3
VGS = 10 V; ID = 5 A; Tj = 150 °C
m?
m?
15.1
m?
Dynamic
Parameter
Test condition
Forward transconductance
Ciss_HS
Input capacitance
VDS = 25 V; f = 1 MHz;
VGS = 0 V (see Figure 6)
Coss_HS
Output capacitance
Crss_HS
Reverse transfer capacitance
Ciss_LS
Input capacitance
VDS = 25 V; f = 1 MHz;
VGS = 0 V (see Figure 7)
Coss_LS
Output capacitance
Crss_LS
Reverse transfer capacitance
1. Pulsed: pulse duration = 300us, duty cycle 1.5%.
Doc ID 022370 Rev 3
Max.
Unit
--
20
--
S
--
17.5
--
S
1836
--
pF
--
426
--
pF
--
VDS = 15 V; ID = 20 A;
Tj = 25 °C
Typ.
55
--
pF
--
Gfs_LS(1)
Min.
--
Gfs_HS(1) Forward transconductance
8/24
Min.
1250
--
pF
--
311
--
pF
--
49
--
pF
VNH7013XP-E
Electrical specifications
Table 7.
Gate resistance
Symbol
Parameter
RG_HS
Typ.
Max.
Unit
--
Gate resistance LS
Min.
20
--
?
--
13
--
?
Min.
Typ.
Max.
Unit
--
0.9
1.1
V
--
50
ns
--
28
nC
--
0.8
A
Min.
Typ.
Max.
Unit
--
53
--
ns
--
319
--
ns
--
36
--
nC
--
8.5
--
nC
--
5
--
nC
Min.
Typ.
Max.
Unit
--
53
--
ns
--
430
--
ns
--
23
--
nC
--
6
--
nC
--
2.5
--
nC
Min.
Typ.
Max.
Unit
--
253
--
ns
--
169
--
ns
Gate resistance HS
RG_LS
Test condition
Table 8.
Symbol
VSD(1)
VDD = 15 V; fgate = 1 MHz
Source drain diode
Parameter
Test conditions
ISD = 20 A; VGS = 0 V;
Tj = 25 °C
Forward on voltage
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
ISD = 20 A; di/dt = 100 A/us;
VDD = 20 V; Tj = 150 °C
(see Figure 10)
1. Pulse width limited by safe operating area.
Table 9.
Symbol
td(on)
tr
Switching on HSD
Parameter
Turn on delay time
Rise time
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
Table 10.
Symbol
td(on)
tr
Turn on delay time
Rise time
Qgs
Gate-source charge
Qgd
Gate-drain charge
td(off)
tf
VDD = 15 V; ID = 20 A;
VGS = 10 V
(see Figure 4 and Figure 9)
Parameter
Total gate charge
Symbol
VDD = 15 V; ID = 20 A;
RG = 4.7 ?; VGS = 10 V
Switching on LSD
Qg
Table 11.
Test conditions
Test conditions
VDD = 15 V; ID = 20 A;
RG = 4.7 ?; VGS = 10 V
VDD = 15 V; ID = 20 A;
VGS = 10 V
(see Figure 5 and Figure 9)
Switching off HSD
Parameter
Turn-off delay time
Fall time
Test conditions
VDD = 15 V; ID = 20 A;
RG = 4.7 ?; VGS = 10 V
(see Figure 11)
Doc ID 022370 Rev 3
9/24
Electrical specifications
Table 12.
Switching off LSD
Symbol
td(off)
tf
Table 13.
VNH7013XP-E
Parameter
Turn-off delay time
Fall time
Test conditions
VDD = 15 V; ID = 20 A;
RG = 4.7 ?; VGS = 10 V
(see Figure 11)
Parameter
Test conditions
VF
Chain diode forward
voltage
Tj = 25 °C; IF = 250 uA
(see Figure 8)
SF
Chain temperature
coefficient
-40 °C & lt; Tj & lt; 175 °C; IF = 250 uA
1. See Figure 8.
10/24
Typ.
Max.
Unit
--
124
--
ns
--
293
--
ns
Min.
Typ.
Max.
Unit
3.72
3.88
4.04
V
Thermal sensor(1)
Symbol
Figure 4.
Min.
Gate charge vs gate-source voltage HS
Doc ID 022370 Rev 3
-8.1
mV/°K
VNH7013XP-E
Electrical specifications
Figure 5.
Gate charge vs gate-source voltage LS
Figure 6.
Capacitance variations HS
Doc ID 022370 Rev 3
11/24
Electrical specifications
Figure 7.
Figure 8.
12/24
VNH7013XP-E
Capacitance variations LS
Thermal sensor voltage vs temperature
Doc ID 022370 Rev 3
VNH7013XP-E
Figure 9.
Electrical specifications
Gate charge test circuit
Figure 10. Test circuit for inductive load switching and diode recovery times
Doc ID 022370 Rev 3
13/24
Electrical specifications
VNH7013XP-E
Figure 11. Switching times test circuit for resistive load
14/24
Doc ID 022370 Rev 3
VNH7013XP-E
Package and PCB thermal data
3
Package and PCB thermal data
3.1
PowerSSO-36 thermal data
Figure 12. PowerSSO-36 PC board
Double layers: footprint
Double layers: 2cm2 of Cu
TBD
Double layers: 8cm2 of Cu
Four layers: Cu on top layer: 16 cm2; Cu on bottom layer: 32 cm2; Cu on middle layer: total coverage
Doc ID 022370 Rev 3
15/24
Package and PCB thermal data
VNH7013XP-E
Figure 13. Chipset configuration
Figure 14. Auto and mutual Rthj-amb vs PCB copper area in open box free air
condition
Note: Referred to double layer PCB
3.1.1
Thermal calculation in clockwise and anti-clockwise operation in
steady-state mode
Table 14.
Thermal calculation in clockwise and anti-clockwise operation in steadystate mode
HSA HSB LSA LSB
TjHSAB
TjLSA
TjLSB
ON OFF OFF ON
PdHSA x RthHSLS + PdLSB
x RthLS + Tamb
OFF ON
16/24
PdHSA x RthHS + PdLSB PdHSA x RthHSLS +
x RthHSLS + Tamb
PdLSB x RthLSLS + Tamb
PdHSB x RthHS + PdLSA PdHSB x RthHSLS +
x RthHSLS + Tamb
PdLSA x RthLS + Tamb
PdHSB x RthHSLS + PdLSA
x RthLSLS + Tamb
ON OFF
Doc ID 022370 Rev 3
VNH7013XP-E
3.1.2
Package and PCB thermal data
Thermal resistances definition (values according to the PCB heatsink
area)
RthHS = RthHSA = RthHSB = High Side Chip Thermal Resistance Junction to Ambient (HSA or
HSB in ON state)
RthLS = RthLSA = RthLSB = Low Side Chip Thermal Resistance Junction to Ambient
RthHSLS = RthHSALSB = RthHSBLSA = Mutual Thermal Resistance Junction to Ambient
between High Side and Low Side Chips
RthLSLS = RthLSALSB = Mutual Thermal Resistance Junction to Ambient between Low Side
Chips
3.1.3
Thermal calculation in transient mode(a)
TjHSAB = ZthHS x PdHSAB + ZthHSLS x (PdLSA + PdLSB) + Tamb
TjLSA = ZthHSLS x PdHSAB + ZthLS x PdLSA + ZthLSLS x PdLSB + Tamb
TjLSB = ZthHSLS x PdHSAB + ZthLSLS x PdLSA + ZthLS x PdLSB + Tamb
3.1.4
Single pulse thermal impedance definition (values according to the
PCB heatsink area)
ZthHS = High Side Chip Thermal Impedance Junction to Ambient
ZthLS = ZthLSA = ZthLSB = Low Side Chip Thermal Impedance Junction to Ambient
ZthHSLS = ZthHSABLSA = ZthHSABLSB = Mutual Thermal Impedance Junction to Ambient
between High Side and Low Side Chips
ZthLSLS = ZthLSALSB = Mutual Thermal Impedance Junction to Ambient between Low Side
Chips
Equation 1: pulse calculation formula
Z TH? = R TH ? ? + Z THtp ( 1 - ? )
where ? = t p / T
a.
Calculation is valid in any dynamic operating condition. Pd values set by user.
Doc ID 022370 Rev 3
17/24
Package and PCB thermal data
Figure 15.
VNH7013XP-E
PowerSSO-36 HSD thermal impedance junction ambient single pulse
Figure 16. PowerSSO-36 LSD thermal impedance junction ambient single pulse
18/24
Doc ID 022370 Rev 3
VNH7013XP-E
Package and PCB thermal data
Figure 17. Thermal fitting model of an H-bridge in PowerSSO-36
Table 15.
Thermal parameters(1)
Area/island (cm2)
Footprint
R1 = R7 (°C/W)
8
4L
0.2
R2 = R8 (°C/W)
2
1.6
R3 (°C/W)
8
R4 (°C/W)
30
16
16
10
R5 (°C/W)
40
22
12
5
R6 (°C/W)
36
28
10
6
R9 = R15 (°C/W)
0.1
R10 = R16 (°C/W)
2.8
R11 = R17 (°C/W)
22
14
14
14
R12 = R18 (°C/W)
49
30
30
20
R13 = R19 (°C/W)
52
36
28
16
R14 = R20 (°C/W)
50
32
26
18
R21 = R22 (°C/W)
80
60
50
40
R23 (°C/W)
80
50
45
30
0.8
C1 = C7 = C9 = C15 (W.s/°C)
0.001
C2 = C8 (W.s/°C)
0.009
C3 (W.s/°C)
0.09
C4 (W.s/°C)
0.5
0.8
0.8
C5 (W.s/°C)
0.8
1.4
2
3
C6 (W.s/°C)
5
6
8
10
C10 = C16 (W.s/°C)
0.1
C11 = C17 (W.s/°C)
0.07
C12 = C18 (W.s/°C)
0.45
0.45
0.45
0.6
C13 = C19 (W.s/°C)
0.8
1
1.2
2.5
C14 = C20 (W.s/°C)
C21 = C22 = C23 (W.s/°C)
4
5
6
8
0.01
0.006
0.005
0.005
1. The blank space means that the value is the same as the previous one.
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Package and packing information
VNH7013XP-E
4
Package and packing information
4.1
ECOPACK(R) packages
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R)
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK(R) is an ST trademark.
4.2
PowerSSO-36 TP package information
Figure 18. PowerSSO-36 TP package dimensions
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VNH7013XP-E
Package and packing information
Table 16.
PowerSSO-36 TP mechanical data
Millimeters
Symbol
Min.
Typ.
Max.
A
2.15
2.47
A2
2.15
2.40
a1
0
0.1
b
0.18
0.36
c
0.23
0.32
D
10.10
10.50
E
7.4
7.6
e
0.5
e3
8.5
F
2.3
G
H
0.1
10.1
10.5
h
0.4
k
0 deg
8 deg
L
0.6
1
M
4.3
N
10 deg
O
1.2
Q
0.8
S
2.9
T
3.65
U
1.0
X1
1.85
2.35
Y1
3
3.5
X2
1.85
2.35
Y2
3
3.5
X3
4.7
5.2
Y3
3
3.5
Z1
0.4
Z2
0.4
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Package and packing information
4.3
VNH7013XP-E
PowerSSO-36 TP packing information
Figure 19. PowerSSO-36 TP tube shipment (no suffix)
C
B
Base Qty
Bulk Qty
Tube length (?0.5)
A
B
C (?0.1)
49
1225
532
3.5
13.8
0.6
All dimensions are in mm.
A
Figure 20. PowerSSO-36 TP tape and reel shipment (suffix "TR")
Reel dimensions
Base Qty
Bulk Qty
A (max)
B (min)
C (?0.2)
F
G (+2 / -0)
N (min)
T (max)
1000
1000
330
1.5
13
20.2
24.4
100
30.4
Tape dimensions
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
Tape width
Tape Hole Spacing
Component Spacing
Hole Diameter
Hole Diameter
Hole Position
Compartment Depth
Hole Spacing
W
P0 (?0.1)
P
D (?0.05)
D1 (min)
F (?0.1)
K (max)
P1 (?0.1)
24
4
12
1.55
1.5
11.5
2.85
2
End
All dimensions are in mm.
Start
Top
cover
tape
No components Components
500mm min
500mm min
Empty components pockets
sealed with cover tape.
User direction of feed
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No components
VNH7013XP-E
5
Revision history
Revision history
Table 17.
Document revision history
Date
Revision
Changes
07-Nov-2011
1
Initial release
18-Jan-2012
2
Changed document status from preliminary data to datasheet.
20-Jan-2012
3
Updated features list.
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VNH7013XP-E
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